APT100GT60JR MICROSEMI, APT100GT60JR Datasheet - Page 2

• Manufacturer Part Number: APT100GT60JR
• Manufacturer: MICROSEMI

Specifications of APT100GT60JR

• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 148A
• Gate To Emitter Voltage (max): ±30V
• Package Type: SOT-227
• Pin Count: 4
• Mounting: Screw
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / Rohs Status: Compliant

DYNAMIC CHARACTERISTICS
THERMAL AND MECHANICAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
3 See MIL-STD-750 Method 3471.
4 E
5 E
6 E
Symbol
Symbol
V
SSOA
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in fi gure 21, but with a Silicon Carbide diode.
loss. (See Figures 21, 22.)
Microsemi Reserves the right to change, without notice, the specifi cations and information contained herein.
V
Isolation
t
t
t
t
R
R
C
E
E
E
E
C
C
Q
Q
d(on)
d(off)
E
d(on)
d(off)
E
W
Q
on1
on2
off
GEP
θ
θ
oes
t
t
on1
on2
t
on1
on2
t
ies
res
off
off
ge
gc
r
r
f
f
g
JC
JC
T
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
RMS Voltage
ces
includes both IGBT and FRED leakages
(50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.)
3
6
4
4
66
4
55
5
T
Inductive Switching (125°C)
15V, L = 100µH,V
Inductive Switching (25°C)
J
= 150°C, R
V
GE
Test Conditions
Capacitance
Gate Charge
T
= 0V, V
V
V
V
T
V
V
V
R
R
f = 1 MHz
I
I
I
J
CC
CC
CE
C
C
J
C
GE
GE
GE
G
G
= +125°C
= +25°C
= 100A
= 100A
= 100A
= 4.3Ω
= 4.3Ω
= 300V
= 400V
= 400V
= 15V
G
= 15V
= 15V
= 4.3Ω, V
CE
CE
= 25V
= 600V
GE
=
2500
300
MIN
MIN
5430
3250
3525
3125
3275
4650
3750
TYP
29.2
508
312
460
210
320
100
350
100
TYP
8.0
40
40
75
40
75
APT100GT60JR
MAX
MAX
N/A
.25
UNIT
UNIT
°C/W
Volts
nC
pF
n
µ
ns
µ
gm
V
A
s
J
J