APT100GT60JR MICROSEMI, APT100GT60JR Datasheet - Page 6

• Manufacturer Part Number: APT100GT60JR
• Manufacturer: MICROSEMI

Specifications of APT100GT60JR

• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 148A
• Gate To Emitter Voltage (max): ±30V
• Package Type: SOT-227
• Pin Count: 4
• Mounting: Screw
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / Rohs Status: Compliant

V
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
CC
Figure 23, Turn-off Switching Waveforms and Defi nitions
Figure 21, Inductive Switching Test Circuit
90%
Switching Energy
r = 4.0 (.157)
t
(2 places)
d(off)
I
C
D.U.T.
t
f
90%
V
CE
10%
APT100DQ60
31.5 (1.240)
31.7 (1.248)
CollectorVoltage
Collector Current
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
A
Gate Voltage
7.8 (.307)
8.2 (.322)
0
SOT-227 (ISOTOP
Dimensions in Millimeters and (Inches)
T
J
= 125°C
3.3 (.129)
3.6 (.143)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
®
* Emitter
* Emitter
) Package Outline
Figure 22, Turn-on Switching Waveforms and Defi nitions
1.95 (.077)
2.14 (.084)
t
10%
d(on)
Switching Energy
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
0.75 (.030)
0.85 (.033)
5%
Collector
Gate
Hex Nut M4
*
(4 places)
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
t
r
10%
12.6 (.496)
12.8 (.504)
90%
5%
25.2 (0.992)
25.4 (1.000)
Collector Current
CollectorVoltage
Gate Voltage
APT100GT60JR
T
J
= 125°C