APT100GT60JR MICROSEMI, APT100GT60JR Datasheet - Page 3

• Manufacturer Part Number: APT100GT60JR
• Manufacturer: MICROSEMI

Specifications of APT100GT60JR

• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 148A
• Gate To Emitter Voltage (max): ±30V
• Package Type: SOT-227
• Pin Count: 4
• Mounting: Screw
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / Rohs Status: Compliant

TYPICAL PERFORMANCE CURVES
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 7, Threshold Voltage vs. Junction Temperature
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
200
180
160
140
120
100
200
180
160
140
120
100
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
80
60
40
20
80
60
40
20
0
0
0
FIGURE 1, Output Characteristics(V
-50 -25
V
0
0
6
V
CE
GE
TEST<0.5 % DUTY
V
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
GE
FIGURE 3, Transfer Characteristics
0.5
250µs PULSE
GE
T
= 15V
J
T
CYCLE
, GATE-TO-EMITTER VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
, GATE-TO-EMITTER VOLTAGE (V)
C
T
8
T
2
T
C
= -55°C
C
J
1
0
= 125 ° C
= 25°C
= 125°C
T
J
1.5
= 25°C
25
I
10
C
4
= 200A
I
C
50
T
2
J
= 100A
I
C
= -55°C
12
= 50A
6
2.5
75
<0.5 % DUTY CYCLE
250µs PULSE TEST
T
100 125 150
3
J
= 25°C.
14
8
GE
3.5
= 15V)
10
16
4
FIGURE 8, DC Collector Current vs Case Temperature
FIGURE 6, On State Voltage vs Junction Temperature
300
250
200
150
100
200
180
160
140
120
100
3.5
2.5
1.5
0.5
50
16
14
12
10
80
60
40
20
FIGURE 2, Output Characteristics (T
0
8
6
4
2
0
4
3
2
1
0
0
-50 -25
V
0
0
0
CE
I
T
<0.5 % DUTY CYCLE
C
250µs PULSE TEST
J
, COLLECTER-TO-EMITTER VOLTAGE (V)
= 100A
= 25°C
V
25
5
100
T
GE
I
T
C
C
J
= 15V.
10V
, Junction Temperature (°C)
, CASE TEMPERATURE (°C)
= 100A
FIGURE 4, Gate Charge
0
V
GATE CHARGE (nC)
10
50
CE
V
9V
12, 13, &15V
25
200
CE
= 300V
= 120V
I
C
15
75
50
= 200A
8V
I
C
300
= 50A
75 100 125 150
100
20
V
7V
CE
400
= 480V
125
25
J
6V
= 125°C)
APT100GT60JR
500
150
30