APT100GT60JR MICROSEMI, APT100GT60JR Datasheet - Page 5

• Manufacturer Part Number: APT100GT60JR
• Manufacturer: MICROSEMI

Specifications of APT100GT60JR

• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 148A
• Gate To Emitter Voltage (max): ±30V
• Package Type: SOT-227
• Pin Count: 4
• Mounting: Screw
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Lead Free Status / Rohs Status: Compliant

TYPICAL PERFORMANCE CURVES
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
Dissipated Power
(Watts)
10,000
Figure 17, Capacitance vs Collector-To-Emitter Voltage
5,000
1,000
0.30
0.25
0.20
0.15
0.10
0.05
500
100
V
0
CE
10
0
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
-5
T
10
J
(°C)
0.05
0.9
0.7
0.5
0.3
0.1
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
0.0120
0.0587
20
10
-4
0.420
Z
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
0.132
30
EXT
are the external thermal
40
4.48
0.0587
C
RECTANGULAR PULSE DURATION (SECONDS)
C
C
ies
0es
res
T
10
C
SINGLE PULSE
-3
(°C)
50
10
-2
100
Figure 20, Operating Frequency vs Collector Current
50
10
5
1
10 20
T
D = 50 %
V
R
J
CE
G
= 125
= 4.3Ω
350
300
250
200
150
100
= 400V
Figure 18,Minimim Switching Safe Operating Area
50
0
I
°
C
0
C
30 40
, COLLECTOR CURRENT (A)
V
10
CE
-1
100
, COLLECTOR TO EMITTER VOLTAGE
T
C
= 100
50
200
°
C
Note:
60
T
C
Peak T J = P DM x Z θJC + T C
300
= 75
Duty Factor D =
70 80
°
C
1.0
400
t 1
t 2
90 100
500
t 1
/
t 2
600
APT100GT60JR
F
f
f
P
max1
max2
max
diss
700
10
=
= min (f
=
=
t
T
d(on)
P
E
R
J
diss
on2
θJC
- T
+ t
max
- P
+ E
C
0.05
r
cond
, f
+ t
off
max2
d(off)
)
+ t
f