M25P128-VME6GB Micron Technology Inc, M25P128-VME6GB Datasheet - Page 16

• Manufacturer Part Number: M25P128-VME6GB
• Manufacturer: Micron Technology Inc

Specifications of M25P128-VME6GB

• Cell Type: NOR
• Density: 128Mb
• Access Time (max): 8ns
• Interface Type: Serial (SPI)
• Address Bus: 1b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: VDFPN EP
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 16M
• Supply Current: 8mA
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / Rohs Status: Compliant

5
Figure 7.
16/47
HOLD
W/V
Q
PP
C
D
S
Memory organization
The memory is organized as:
Each page can be individually programmed (bits are programmed from 1 to 0). The device is
Sector or Bulk Erasable (bits are erased from 0 to 1) but not Page Erasable.
Block diagram
Address Register
16777216 bytes (8 bits each)
64 sectors (2 Mbits, 262144 bytes each)
65536 pages (256 bytes each).
Control Logic
and Counter
00000h
I/O Shift Register
256 Bytes (Page Size)
High Voltage
Generator
X Decoder
Data Buffer
256 Byte
FFFFFFh
000FFh
Register
Status
memory area
Size of the
read-only
AI11316b