M25P128-VME6GB Micron Technology Inc, M25P128-VME6GB Datasheet - Page 40
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M25P128-VME6GB
Manufacturer Part Number
M25P128-VME6GB
Description
Manufacturer
Micron Technology Inc
Datasheet
1.M25P128-VME6GB.pdf
(47 pages)
Specifications of M25P128-VME6GB
Cell Type
NOR
Density
128Mb
Access Time (max)
8ns
Interface Type
Serial (SPI)
Address Bus
1b
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
-40C to 85C
Package Type
VDFPN EP
Sync/async
Synchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8b
Number Of Words
16M
Supply Current
8mA
Mounting
Surface Mount
Pin Count
8
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M25P128-VME6GB
Manufacturer:
NUMONYX
Quantity:
1 920
Company:
Part Number:
M25P128-VME6GB
Manufacturer:
SILICON
Quantity:
2 310
Part Number:
M25P128-VME6GB
Manufacturer:
ST
Quantity:
20 000
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Table 17.
1. t
2. Value is guaranteed by characterization, not 100% tested in production.
3. Expressed as a slew-rate.
4. Only applicable as a constraint for WRSR instruction when SRWD is set to 1.
5. V
6. When using the Page Program (PP) instruction to program consecutive Bytes, optimized timings are
Figure 20. Serial input timing
S
C
D
Q
Symbol
(success or failure) is known.
obtained with one sequence including all the Bytes versus several sequences of only a few Bytes. If only a
single byte is programmed, the estimated programming time is close to the time needed to program a full
page of 256 Bytes. Therefore, it is highly recommended to use the Page Program (PP) instruction with a
sequence of 256 consecutive Bytes. (1 ≤ n ≤ 256)
CH
PPH
t
BE
and t
should be kept at a valid level until the program or erase operation has completed and its result
tCHSL
CL
must be greater than or equal to 1/f
AC characteristics for 130 nm devices (continued)
Alt.
tDVCH
Bulk Erase Cycle Time
Bulk Erase Cycle Time (V
Test conditions specified in
High Impedance
MSB IN
tSLCH
tCHDX
Parameter
C
(max).
PP
= V
Table 11
PPH
tCLCH
)
tCHSH
and
LSB IN
Table 12
Min.
tCHCL
tSHSL
56
Typ.
105
(2)
tSHCH
Max.
250
AI01447C
Unit
s