TSM7N65CI C0 Taiwan Semiconductor

MOSFET Power 650V 3Amp N Channel Pwr MOSFET Isolated

TSM7N65CI C0

Manufacturer Part Number

TSM7N65CI C0

Description

MOSFET Power 650V 3Amp N Channel Pwr MOSFET Isolated

Manufacturer

Taiwan Semiconductor

Specifications of TSM7N65CI C0

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

1.2 Ohms

Forward Transconductance Gfs (max / Min)

3.7 S

Drain-source Breakdown Voltage

650 V

Continuous Drain Current

7 A

Power Dissipation

30 W

Mounting Style

Through Hole

Package / Case

ITO-220

Fall Time

19 nS

Gate Charge Qg

46 nC

Rise Time

14 nS

Lead Free Status / Rohs Status

Details

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