PMBT3906 NXP Semiconductors, PMBT3906 Datasheet - Page 4

PMBT3906

Manufacturer Part Number
PMBT3906
Description
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMBT3906

Transistor Polarity
PNP
Number Of Elements
1
Collector-emitter Voltage
40V
Collector-base Voltage
40V
Emitter-base Voltage
6V
Collector Current (dc) (max)
200mA
Power Dissipation
250mW
Frequency (max)
250MHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
TO-236AB
Lead Free Status / Rohs Status
Compliant

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NXP Semiconductors
PMBT3906_6
Product data sheet
Fig 1.
Fig 3.
−1200
(mV)
−1000
V
−800
−600
−400
−200
h
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
BE
600
400
200
FE
−10
−10
0
V
DC current gain as a function of collector
current; typical values
V
collector current; typical values
Base-emitter voltage as a function of
−1
−1
amb
amb
amb
amb
amb
amb
CE
CE
= −1 V
= −1 V
= 150 °C
= 25 °C
= −55 °C
= −55 °C
= 25 °C
= 150 °C
−1
−1
(1)
(2)
(3)
−10
−10
(1)
(2)
(3)
−10
−10
2
2
All information provided in this document is subject to legal disclaimers.
I
I
C
C
(mA)
(mA)
mhc459
mhc461
−10
−10
Rev. 06 — 2 March 2010
3
3
Fig 2.
Fig 4.
V
(mV)
−1200
−1000
BEsat
(mA)
−800
−600
−400
−200
−250
−200
−150
−100
(1) T
(2) T
(3) T
I
−50
C
−10
0
0
T
Collector current as a function of
collector-emitter voltage; typical values
I
Base-emitter saturation voltage as a function
of collector current; typical values
C
−1
amb
amb
amb
amb
/I
B
= 10
= 25 °C
= −55 °C
= 25 °C
= 150 °C
−2
−1
−4
−10
(1)
(2)
(3)
I
B
PNP switching transistor
(mA) = −1.5
−6
PMBT3906
−1.2
−0.9
−0.6
−0.3
−10
© NXP B.V. 2010. All rights reserved.
−8
2
I
C
006aab845
−1.05
−0.75
−0.45
−0.15
−1.35
V
(mA)
mhc462
CE
(V)
−10
−10
3
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