M29F040B120K1T Micron Technology Inc, M29F040B120K1T Datasheet

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M29F040B120K1T

Manufacturer Part Number
M29F040B120K1T
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of M29F040B120K1T

Cell Type
NOR
Density
4Mb
Access Time (max)
120ns
Interface Type
Parallel
Boot Type
Not Required
Address Bus
19b
Operating Supply Voltage (typ)
5V
Operating Temp Range
0C to 70C
Package Type
PLCC
Program/erase Volt (typ)
4.5 to 5.5V
Sync/async
Asynchronous
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Word Size
8b
Number Of Words
512K
Supply Current
15mA
Mounting
Surface Mount
Pin Count
32
Lead Free Status / Rohs Status
Not Compliant

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Part Number:
M29F040B120K1T
Manufacturer:
ST
0
M29F040B
4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory
SINGLE 5V ± 10% SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
ACCESS TIME: 45ns
PROGRAMMING TIME
– 8 µs per Byte typical
8 UNIFORM 64 Kbytes MEMORY BLOCKS
PLCC32 (K)
TSOP32 (N)
PROGRAM/ERASE CONTROLLER
8 x 20mm
– Embedded Byte Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
LOW POWER CONSUMPTION
– Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: E2h
®
ECOPACK
PACKAGES AVAILABLE
September 2005
1/20

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M29F040B120K1T Summary of contents

Page 1

... Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ACCESS TIME: 45ns PROGRAMMING TIME – 8 µs per Byte typical 8 UNIFORM 64 Kbytes MEMORY BLOCKS PROGRAM/ERASE CONTROLLER – Embedded Byte Program algorithm – Embedded Multi-Block/Chip Erase algorithm – ...

Page 2

M29F040B Figure 1. Logic Diagram A0-A18 W M29F040B Figure 2. PLCC Connections M29F040B DQ0 17 2/20 Table 1. Signal Names A0-A18 DQ0-DQ7 ...

Page 3

Table 2. Absolute Maximum Ratings Symbol Ambient Operating Temperature (Temperature Range Option 1) T Ambient Operating Temperature (Temperature Range Option 6) A Ambient Operating Temperature (Temperature Range Option 3) T Temperature Under Bias BIAS T Storage Temperature STG (2) Input ...

Page 4

M29F040B SIGNAL DESCRIPTIONS See Figure 1, Logic Diagram, and Table 1, Signal Names, for a brief overview of the signals connect this device. Address Inputs (A0-A18). The Address Inputs select the cells in the memory array to access ...

Page 5

... Program or Erase. Protected blocks can be unprotected to allow data to be changed. Block Protection and Blocks Unprotection operations must only be performed on programming equip- ment. For further information refer to Application Note AN1122, Applying Protection and Unprotec- tion to M29 Series Flash Address Inputs V V Cell Address ...

Page 6

M29F040B COMMAND INTERFACE All Bus Write operations to the memory are inter- preted by the Command Interface. Commands consist of one or more sequential Bus Write oper- ations. Failure to observe a valid sequence of Bus Write operations will result ...

Page 7

Table 5. Commands Command Addr Data 1 X Read/Reset 3 555 Auto Select 3 555 Program 4 555 Unlock Bypass 3 555 Unlock Bypass 2 X Program Unlock Bypass Reset 2 X Chip Erase 6 555 Block Erase 6+ 555 ...

Page 8

M29F040B Block Erase Command. The Block Erase com- mand can be used to erase a list of one or more blocks. Six Bus Write operations are required to select the first block in the list. Each additional block in the ...

Page 9

STATUS REGISTER Bus Read operations from any address always read the Status Register during Program and Erase operations also read during Erase Sus- pend when an address within a block being erased is accessed. The bits in the ...

Page 10

M29F040B Figure 4. Data Polling Flowchart START READ DQ5 & DQ7 at VALID ADDRESS DQ7 YES = DATA NO NO DQ5 = 1 YES READ DQ7 at VALID ADDRESS DQ7 YES = DATA NO FAIL Erase Timer Bit (DQ3). The ...

Page 11

Table 8. AC Measurement Conditions Parameter AC Test Conditions Load Capacitance ( Input Rise and Fall Times Input Pulse Voltages Input and Output Timing Ref. Voltages Figure 6. AC Testing Input Output Waveform High Speed 3V 0V Standard ...

Page 12

M29F040B Table 10. DC Characteristics ( 70°C, –40 to 85°C or –40 to 125°C) A Symbol Parameter I Input Leakage Current LI I Output Leakage Current LO I Supply Current (Read) CC1 I Supply Current (Standby) TTL ...

Page 13

Table 11. Read AC Characteristics ( 70°C, –40 to 85°C or –40 to 125°C) Symbol Alt t t Address Valid to Next Address Valid AVAV Address Valid to Output Valid AVQV ACC Chip Enable ...

Page 14

M29F040B Table 12. Write AC Characteristics, Write Enable Controlled ( °C, – °C or –40 to 125 °C) A Symbol Alt t t Address Valid to Next Address Valid AVAV Chip ...

Page 15

Table 13. Write AC Characteristics, Chip Enable Controlled ( °C, – °C or –40 to 125 °C) A Symbol Alt t t Address Valid to Next Address Valid AVAV Write Enable ...

Page 16

M29F040B Table 14. Ordering Information Scheme Example: Device Type M29 Operating Voltage ± 10% CC Device Function 040B = 4 Mbit (512Kb x8), Uniform Block Speed ...

Page 17

Table 15. PLCC32 – 32 lead Plastic Leaded Chip Carrier, Package Mechanical Data Symbol Typ 7. 10. 0.89 Figure 11. PLCC32 ...

Page 18

M29F040B Table 16. TSOP32 – 32 lead Plastic Thin Small Outline 20mm, Package Mechanical Data Symbol Typ 0. Figure 12. TSOP32 – 32 lead Plastic Thin ...

Page 19

Table 17. Revision History Date Rev. July 1999 -01 First Issue 21-Sep-1999 -02 I and I CC1 New document template Document type: from Preliminary Data to Data Sheet 28-Jul-2000 -03 Status Register bit DQ5 clarification Data Polling Flowchart diagram change ...

Page 20

M29F040B Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its ...

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