LH28F800SGN-L70 Sharp Electronics, LH28F800SGN-L70 Datasheet - Page 5

• Manufacturer Part Number: LH28F800SGN-L70
• Manufacturer: Sharp Electronics

Specifications of LH28F800SGN-L70

• Cell Type: NOR
• Density: 8Mb
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 19b
• Operating Supply Voltage (typ): 3.3/5V
• Operating Temp Range: 0C to 70C
• Package Type: SOP
• Program/erase Volt (typ): 2.7/3.3/5/12V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 2.7/4.5V
• Operating Supply Voltage (max): 3.6/5.5V
• Word Size: 16b
• Number Of Words: 512K
• Supply Current: 65mA
• Mounting: Surface Mount
• Pin Count: 44
• Lead Free Status / Rohs Status: Not Compliant

1 INTRODUCTION
This datasheet contains LH28F800SG-L specifi-
cations. Section 1 provides a flash memory
overview. Sections 2, 3, 4, and 5 describe the
memory organization and functionality. Section 6
covers electrical specifications. LH28F800SG-L flash
memory documentation also includes ordering
information which is referenced in Section 7.
1.1 New Features
Key enhancements of LH28F800SG-L SmartVoltage
flash memory are :
• SmartVoltage Technology
• Enhanced Suspend Capabilities
• In-System Block Locking
• Permanent Lock Capability
Note following important differences :
• V
• To take advantage of SmartVoltage technology,
• Once set the permanent lock bit, the blocks which
1.2 Product Overview
The LH28F800SG-L is a high-performance 8 M-bit
SmartVoltage flash memory organized as 512 k-
word of 16 bits. The 512 k-word of data is arranged
in sixteen 32 k-word blocks which are individually
erasable, lockable, and unlockable in-system. The
memory map is shown in Fig. 1.
SmartVoltage technology provides a choice of V
and V
meet system performance and power expectations.
2.7 to 3.6 V V
3.3 V and 5 V block erase, word write, and lock-
bit configuration operations. Designs that switch
V
that the V
allow V
have been set block lock-bit can not be erased,
written forever.
PP
PPLK
off during read operations should make sure
PP
CC
has been lowered to 1.5 V to support
combinations, as shown in Table 1, to
PP
connection to 2.7 V, 3.3 V or 5 V.
CC
voltage transitions to GND.
consumes approximately one-fifth
CC
- 5 -
the power of 5 V V
highest read performance. V
5 V eliminates the need for a separate 12 V
converter, while V
and word write performance. In addition to flexible
erase and program voltages, the dedicated V
gives complete data protection when V
Internal V
matically configures the device for optimized read
and write operations.
A command User Interface (CUI) serves as the
interface between the system processor and
internal operation of the device. A valid command
sequence written to the CUI initiates device
automation. An internal Write State Machine (WSM)
automatically executes the algorithms and timing
necessary for block erase, word write, and lock-bit
configuration operations.
A block erase operation erases one of the device’s
32 k-word blocks typically within 1.2 second (5 V
V
block can be independently erased 100 000 times
(1.6 million block erases per device). Block erase
suspend mode allows system software to suspend
block erase to read data from, or write data to any
other block.
Writing memory data is performed in word
increments typically within 7.5 µs (5 V V
V
system to read data from, or write data to any other
flash memory array location.
CC
PP
Table 1 V
). Word write suspend mode enables the
, 12 V V
V
CC
VOLTAGE
2.7 V
3.3 V
CC
5 V
Offered by SmartVoltage Technology
PP
CC
and V
) independent of other blocks. Each
and V
PP
LH28F800SG-L (FOR SOP)
CC
= 12 V maximizes block erase
PP
. But, 5 V V
PP
detection circuitry auto-
Voltage Combinations
2.7 V, 3.3 V, 5 V, 12 V
PP
3.3 V, 5 V, 12 V
V
at 2.7 V, 3.3 V and
PP
5 V, 12 V
CC
VOLTAGE
provides the
PP
≤ V
CC
, 12 V
PP
PPLK
pin
.