LH28F016SUT-10 Sharp Electronics, LH28F016SUT-10 Datasheet
LH28F016SUT-10
Specifications of LH28F016SUT-10
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LH28F016SUT-10 Summary of contents
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... Write During Erase – Command Superset of Sharp LH28F008SA • 5 µA (Typ CMOS Standby CC • 1 µA (Typ.) Deep Power-Down • State-of-the-Art 0.55 µm ETOX™ Flash Technology • 56-Pin, 1.2 mm × × TSOP (Type I) Package 16M (1M × 16, 2M × 8) Flash Memory 56-PIN TSOP 1 3 ...
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... BYTE Figure 2. TSOP Reverse Bend Configuration 2 16M (1M × 16, 2M × 8) Flash Memory INTRODUCTION TOP VIEW Sharp’s LH28F016SU 16M Flash Memory is a revo- lutionary architecture which enables the design of truly 1 3/5 mobile, high performance, personal computing and com munication products. With innovative capabilities ...
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... Flash Memory OUTPUT BUFFER OUTPUT MULTIPLEXER INPUT BUFFER Y-DECODER ADDRESS X-DECODER QUEUE LATCHES ADDRESS COUNTER Figure 3. LH28F016SU Block Diagram (Architectural Evolution Includes Page Buffers, Queue Registers and Extended Status Registers OUTPUT INPUT BUFFER BUFFER DATA ID QUEUE REGISTER ...
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... V ±0 required to allow these circuits to power-up. When RP » is high. » » » CE overrides OE , and OE overrides WE. X » 16M (1M × 16, 2M × 8) Flash Memory - selects high, the device is de-selected and power urs with the latter occ » » disables the device. ...
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... Flash Memory PIN DESCRIPTION (Continued) SYMBOL TYPE WRITE PROTECT: Erase blocks can be locked by writing a non-volatile lock-bit for each block. When WP is low, those locked blocks as reflected by the Block-Lock Status WP INPUT bits (BSR.6), are protected from inadvertent Data Writes or Erases. When WP is high, all blocks can be Written or Erased regardless of the state of the lock-bits ...
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... MAX. ACCESS (T ) ACC 120 ns 160 ns 16M (1M × 16, 2M × 8) Flash Memory current 5 » (called PWD on the LH28F008SA) pin » pin turned to low or- » is required to stay = 5.0 V ± 0 required from RP CC » ...
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... Flash Memory MEMORY MAP 1FFFFFH 64KB BLOCK 1F0000H 1EFFFFH 64KB BLOCK 1E0000H 1DFFFFH 64KB BLOCK 1D0000H 1CFFFFH 64KB BLOCK 1C0000H 1BFFFFH 64KB BLOCK 1B0000H 1AFFFFH 64KB BLOCK 1A0000H 19FFFFH 64KB BLOCK 190000H 18FFFFH 64KB BLOCK 180000H 17FFFFH ...
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... » » , which is either V OL » » through a resistor. When the until all operations are complete 16M (1M × 16, 2M × 8) Flash Memory » » NOTE OUT High High High 00B0H 6688H » » ...
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... Flash Memory LH28F008SA-Compatible Mode Command Bus Definitions COMMAND Read Array Intelligent Identifier Read Compatible Status Register Clear Status Register Word Write Alternate Word/Byte Write Block Erase/Confirm Erase Suspend/Resume ADDRESS DATA AA = Array Address AD = Array Data BA = Block Address CSRD = CSR Data ...
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... Write X D0H X 96H Write X 01H X 96H Write X 02H X 96H Write X 03H X 96H Write X 04H X F0H X 80H 16M (1M × 16, 2M × 8) Flash Memory THIRD BUS CYCLE NOTE OPER. ADDR. DATA 1 7 Write X BCH Write X WCH Write Write WA WCH Write WA WD (H, L) ...
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... These commands reconfigure Write address, WA, is the Destination address in the flash array which must match the Source address in the Page Buffer. Refer to the LH28F016SU User’s Manual. 10. BCL = 00H corresponds to a Byte count of 1. Similarly, WCL = 00H corresponds to a Word count of 1. ...
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... Selected Page Buffer is currently busy with WSM operation. 7. When multiple operations are queued, checking BSR.7 only provides indication of completion for that particular block. GSR.7 provides indication when all queuedf opera- tions are completed. 16M (1M × 16, 2M × 8) Flash Memory PBAS PBS PBSS 2 ...
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... Flash Memory BLOCK STATUS REGISTER BS BLS BOS 7 6 BSR.7 = BLOCK STATUS (BS Ready 0 = Busy BSR.6 = BLOCK-LOCK STATUS (BLS Block Unlocked for Write/Erase 0 = Block Locked for Write/Erase BSR.5 = BLOCK OPERATION STATUS (BOS Operation Unsuccessful 0 = Operation Successful or Currently Running BSR.4 = BLOCK OPERATION ABORT STATUS (BOAS) ...
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... -0 0.5 CC ±30 100.0 4 MIN. MAX -0.2 7.0 -0.2 7 -0.5 7.0 ±30 100.0 + 0.5 V which, during transitions, may overshoot 16M (1M × 16, 2M × 8) Flash Memory UNITS TEST CONDITIONS NOTE °C Ambient Temperature UNITS TEST CONDITIONS NOTE °C Ambient Temperature 2.0 V for periods < 20 ns. ...
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... Flash Memory Capacitance For 3.3 V Systems SYMBOL PARAMETER Capacitance Looking into Address/Control Pin C Capacitance Looking into an Output Pin OUT Load Capacitance Driven by Outputs for C LOAD Timing Specifications Equivalent Testing Load Circuit Capacitance For 5.0 V Systems SYMBOL PARAMETER ...
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... P RP » (Deep Power-Down Pin) » » (Ready/Busy) V Any Voltage Level Y 3/5 » Pin 4.5 V Min 3.0 V Min 16M (1M × 16, 2M × 8) Flash Memory » (W) going high (H) PIN STATES H High L Low V Valid X Driven, but not necessarily valid Z High Impedance ...
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... Flash Memory 2.4 2.0 INPUT TEST POINTS 0.8 0.45 NOTE: AC test inputs are driven for a Logic '1' and V OH TTL (0. for a Logic '0'. Input timing begins at V TTL and V (0 Output timing ends TTL and fall times (10% to 90%) < 10 ns. ...
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... BYTE = V Inputs = GND ±0 TTL: CE BYTE = V Inputs = MHz Word/Byte Write in Progress Block Erase in Progress Block Erase Suspended ±1 ±10 µ 0.2 5 µA RP 16M (1M × 16, 2M × 8) Flash Memory TEST CONDITIONS = V MAX GND MAX GND MAX., CC » » » ±0 » ±0 GND ...
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... Flash Memory DC Characteristics (Continued 3.3 V ± 0 0°C to +70° » 3/5 = Pin Set High for 3.3 V Operations SYMBOL PARAMETER I V Read Current PPR Write Current PPW Erase Current PPE PP V Erase Suspend PP I PPES ...
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... CMOS: CE BYTE = V Inputs = GND ±0 TTL: CE BYTE = V Inputs = MHz Word/Byte Write in Progress Block Erase in Progress Block Erase Suspended ±10 µ 0.2 5 µA RP 16M (1M × 16, 2M × 8) Flash Memory TEST CONDITIONS NOTE = V MAX GND MAX GND MAX., CC » » » ±0 » ...
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... Flash Memory DC Characteristics (Continued 5.0 V ± 0 0°C to +70° » 3.5 Pin Set Low for 5 V Operations SYMBOL PARAMETER I V Read Current PPR Write Current PPW Erase Current PPE PP V Erase Suspend PP I PPES ...
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... BYTE to Output Delay t FHQV t BYTE Low to Output in High Z FLQZ t ELFL BYTE High or Low ELFH 3.3 V ± 0 MIN. MAX. 120 10 0 120 120 620 » 120 30 » Low 5 16M (1M × 16, 2M × 8) Flash Memory = 2 3.6 V UNITS NOTE MIN. MAX. 160 160 ns 160 ns 2 650 ...
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... Flash Memory AC Characteristics - Read Only Operations T = 0°C to +70°C A SYMBOL PARAMETER t Read Cycle Time AVAV » t Address Setup to CE Going Low AVEL » t Address Setup to OE Going Low AVGL t Address to Output Delay AVQV » Output Delay ELQV » ...
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... OUTPUTS ENABLED ADDRESSES STABLE t AVAV t AVEL t AVGL t GLQV t ELQV t GLQX t ELQX t AVQV t PHQV or CE going LOW or the first Figure 12. Read Timing Waveforms 16M (1M × 16, 2M × 8) Flash Memory V CC DATA VALID STANDBY POWER-DOWN . . . . . . . . . t EHQZ . . . t GHQZ . . . HIGH-Z VALID OUTPUT . . . going HIGH. 1 28F016SUT-10 ...
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... Flash Memory V IH ADDRESSES ( ( (NOTE ( BYTE ( HIGH-Z OH DATA ( HIGH DATA ( NOTE defined as the latter ADDRESSES STABLE t AVAV AVEL ELFL t t AVEL ELFL t AVGL t FLQV t GLQV t ELQV t GLQX t ELQX t AVQV t FLQZ or CE going LOW or the first » ...
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... ADDRESS (A) DATA (Q) Figure 14 PLPH t AVQV t PHQV t PLPH t YHPH t PLYL 3.3 V 4 3VPH PL5V VALID t AVQV VALID t PHQV » Power-Up and RP Reset Waveforms CC 16M (1M × 16, 2M × 8) Flash Memory VALID VALID t YLPH 5 5VPH VALID t AVQV VALID t PHQV 28F016SUT-12 ...
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... Flash Memory SYMBOL t PLYL » » RP Low to 3/5 t PLYH t YLPH » 3/5 Low (High YHPH » Low to V PL5V 3.0 V min or 3.6 V MAX.) PL3V » 'Low' PLPH 4 5VPH 3 3VPH CC t Address Valid to Data Valid for V AVQV » ...
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... Write Recovery before Read WHGL V Hold from Valid Status Register PP t QVVL (CSR, GSR, BSR) Data and Duration of Byte Write Operation WHQV 2 t Duration of Block Erase Operation WHQV 28 16M (1M × 16, 2M × 8) Flash Memory V = 3.3 ± 0 TYP. MIN. MAX. 120 100 480 ...
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... Flash Memory AC Characteristics for WE » - Controlled Command Write Operations T = 0°C to +70°C A SYMBOL PARAMETER t Write Cycle Time AVAV t V Setup to WE Going High VPWH PP » » Setup to CE Going Low PHEL t CE » Setup to WE Going Low ...
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... AVWH WHAX t t WHWL WHQV WHDX t DVWH WHRL t VPWH going LOW or the first going HIGH 16M (1M × 16, 2M × 8) Flash Memory READ EXTENDED STATUS REGISTER DATA READ COMPATIBLE STATUS REGISTER DATA WHGL t GHWL OUT IN t RHPL (NOTE 5) t QVVL 28F016SUT-13 ...
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... Flash Memory AC Characteristics for CE » - Controlled Command Write Operations T = 0°C to +70°C A SYMBOL PARAMETER t Write Cycle Time AVAV » Setup to WE Going Low PHWL » Set Going High VPEH Setup to CE » Going Low WLEL » ...
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... Going Low 4.5 0.3 » » going High » for all Command Write Operations. 16M (1M × 16, 2M × 8) Flash Memory 1 (Continued 5.0 V ± 0 UNITS NOTE TYP. MIN. MAX 480 ns 3 100 ...
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... Flash Memory WRITE DATA-WRITE OR ERASE DEEP SETUP COMMAND POWER-DOWN V ADDRESSES (A) IH (NOTE AVAV V ADDRESSES (A) IH (NOTE AVAV ( EHWH t WLEL ( ( (NOTE ELEH DATA (D/Q) V HIGH PHEL V OH RY/ PPH V ( PPL NOTES: 1. This address string depicts Data-Write/Erase cycles with corresponding verification via ESRD. ...
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... V = 5.0 V ± 0. TYP. MIN. MAX. TYP » » going High » controlled write timings apply. » Low pulse. 16M (1M × 16, 2M × 8) Flash Memory UNITS NOTE 5.0 V ± 0 UNITS NOTE MIN. MAX ...
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... Flash Memory CE ( ELWL WE (W) ADDRESSES (A) HIGH-Z DATA (D/Q) Figuer 17. Page Buffer Write Timing Waveforms Erase and Word/Byte Write Performance V = 3.3 V ± 0 0°C to +70° SYMBOL PARAMETER 1 t Word/Byte Write Time WHRH 2 t Block Write Time WHRH ...
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... MAXIMUM LIMIT DIMENSIONS IN MM [INCHES] MINIMUM LIMIT ORDERING INFORMATION LH28F016SU T -## Device Type Package Speed Example: LH28F016SUT-70 (16M ( Flash Memory, 70 ns, 56-pin TSOP 0.13 [0.005] 20.30 [0.799] 19.70 [0.776] 18.60 [0.732] 18.20 [0.717] 19.30 [0.760] 18.70 [0.736 ...
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... Camas, WA 98607, U.S.A. Phone: (360) 834-2500 Telex: 49608472 (SHARPCAM) Facsimile: (360) 834-8903 http://www.sharpmeg.com ©1997 by SHARP Corporation Issued May 1996 EUROPE SHARP Electronics (Europe) GmbH Microelectronics Division Sonninstraße 3 20097 Hamburg, Germany Phone: (49) 40 2376-2286 Telex: 2161867 (HEEG D) Facsimile: (49) 40 2376-2232 LH28F016SU ...