LH28F016SUT-10 Sharp Electronics, LH28F016SUT-10 Datasheet - Page 2

• Manufacturer Part Number: LH28F016SUT-10
• Manufacturer: Sharp Electronics

Specifications of LH28F016SUT-10

• Cell Type: NOR
• Density: 16Mb
• Access Time (max): 100ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 21/20Bit
• Operating Supply Voltage (typ): 3.3/5V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP-I
• Program/erase Volt (typ): 4.5 to 5.5V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 3/4.5V
• Operating Supply Voltage (max): 3.6/5.5V
• Word Size: 8/16Bit
• Number Of Words: 2M/1M
• Supply Current: 60mA
• Mounting: Surface Mount
• Pin Count: 56
• Lead Free Status / Rohs Status: Not Compliant

LH28F016SU
2
56-PIN TSOP
Figure 2. TSOP Reverse Bend Configuration
RY/BY
BYTE
DQ
DQ
DQ
DQ
DQ
GND
DQ
GND
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
DQ
V
V
DQ
WP
WE
OE
NC
NC
CC
CC
A
10
15
14
13
12
11
2
7
6
5
4
3
9
8
0
0
1
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
12
13
14
17
18
19
23
24
10
15
16
20
22
25
26
27
28
11
21
2
3
4
5
6
7
8
9
1
TOP VIEW
28F016SUT-17
NC
RP
3/5
CE
A
A
A
A
A
V
A
A
A
A
CE
V
A
A
A
A
GND
A
A
A
A
A
A
A
12
4
20
19
18
17
16
CC
15
14
13
PP
11
10
9
8
7
6
5
3
2
1
1
0
INTRODUCTION
lutionary architecture which enables the design of truly
mobile, high performance, personal computing and com-
munication products. With innovative capabilities, 5 V
single voltage operation and very high read/write per-
formance, the LH28F016SU is also the ideal choice for
designing embedded mass storage memory systems.
formance non-volatile read/write solution for solid-state
storage applications. Its symmetrically blocked archi-
tecture (100% compatible with the LH28F008SA 8M
Flash memory), extended cycling, low power 3.3 V
operation, very fast write and read performance and
selective block locking provide a highly flexible memory
component suitable for high density memory cards,
Resident Flash Arrays and PCMCIA-ATA Flash Drives.
The LH28F016SU’s dual read voltage enables the
design of memory cards which can interchangeably be
read/written in 3.3 V and 5.0 V systems. Its x8/x16
architecture allows the optimization of memory to pro-
cessor interface. The flexible block locking option
enables bundling of executable application software in
a Resident Flash Array or memory card. Manufactured
on Sharp’s 0.55 µm ETOX™ process technology, the
LH28F016SU is the most cost-effective, high-density
3.3 V flash memory.
DESCRIPTION
(16,777,216 bit) block erasable non-volatile random
access memory organized as either 1M × 16 or 2M × 8.
The LH28F016SU includes thirty-two 64K (65,536)
blocks or thirty-two 32-KW (32,768) blocks. A chip
memory map is shown in Figure 4.
enhanced features, will improve the device operating
characteristics and results in greater product reliability
and ease of use.
LH28F016SU:
•
•
•
•
optimized 3.3 V or 5.0 V read/write operation.
1.2 mm thick × 14 mm × 20 mm TSOP (Type I) pack-
age. This form factor and pinout allow for very high board
layout densities.
Sharp’s LH28F016SU 16M Flash Memory is a revo-
The LH28F016SU is a very high density, highest per-
The LH28F016SU is a high performance 16M
The implementation of a new architecture, with many
Among the significant enhancements of the
5 V Write/Erase Operation (5 V V
3.3 V Low Power Capability (2.7 V V
Improved Write Performance
Dedicated Block Write/Erase Protection
A 3/5
The LH28F016SU will be available in a 56-pin,
»
input pin reconfigures the device internally for
16M (1M × 16, 2M × 8) Flash Memory
PP
)
CC
Read)