LH28F640BFHE-PBTLHGA Sharp Electronics, LH28F640BFHE-PBTLHGA Datasheet
LH28F640BFHE-PBTLHGA
Specifications of LH28F640BFHE-PBTLHGA
Related parts for LH28F640BFHE-PBTLHGA
LH28F640BFHE-PBTLHGA Summary of contents
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Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written permission of the company. • When using the products covered herein, ...
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TSOP Pinout................................................. 3 Pin Descriptions.......................................................... 4 Simultaneous Operation Modes Allowed with Four Planes .................................. 5 Memory Map .............................................................. 6 Identifier Codes and OTP Address for Read Operation ............................................. 7 Identifier Codes and OTP Address for Read Operation on Partition ...
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... Fast program capability is provided through the use of high speed Page Buffer Program. Special OTP (One Time Program) block provides an area to store permanent code such as a unique number. * ETOX is a trademark of Intel Corporation. LHF64FHG LH28F640BFHE-PBTLHGA 64Mbit (4Mbit×16) Flexible Blocking Architecture • Eight 4K-word Parameter Blocks • ...
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WE# 11 RST WP# 14 RY/BY# ...
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... DEVICE POWER SUPPLY (2.7V-3.6V): With V V SUPPLY flash memory are inhibited. Device operations at invalid V CC Characteristics) produce spurious results and should not be attempted. GND SUPPLY GROUND: Do not float any ground pins ...
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Table 2. Simultaneous Operation Modes Allowed with Four Planes IF ONE Read Read PARTITION IS: Array ID/OTP Read Array X X Read ID/OTP X X Read Status X X Read Query X X Word Program X X Page Buffer X ...
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BLOCK NUMBER ADDRESS RANGE 134 3F8000H - 3FFFFFH 32K-WORD 133 3F0000H - 3F7FFFH 32K-WORD 132 3E8000H - 3EFFFFH 32K-WORD 131 3E0000H - 3E7FFFH 32K-WORD 130 3D8000H - 3DFFFFH 32K-WORD 129 32K-WORD 3D0000H - 3D7FFFH 128 32K-WORD 3C8000H - 3CFFFFH 127 ...
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Table 3. Identifier Codes and OTP Address for Read Operation Manufacturer Code Manufacturer Code Device Code Bottom Parameter Device Code Block Lock Configuration Block is Unlocked Code Block is Locked Block is not Locked-Down Block is Locked-Down Device Configuration Code ...
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LHF64FHG [ 000088H Customer Programmable Area 000085H 000084H Factory Programmed Area 000081H Reserved for Future Implementation 000080H (DQ -DQ 15 Customer Programmable Area Lock Bit (DQ Factory Programmed Area Lock Bit (DQ Figure 3. OTP Block ...
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Mode Notes RST# Read Array Output Disable V IH Standby V IH Reset Read Identifier Codes/OTP V Read Query 6,7 IH Write 4,5 NOTES: 1. See DC Characteristics for ...
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... OTP block (See Table 3 and Table 4). The Read Query command is available for reading CFI (Common Flash Interface) information. 5. Block erase, full chip erase or (page buffer) program cannot be executed when the selected block is locked. Unlocked block can be erased or programmed when RST ...
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LH28F640BF series for details the program operation in one partition is suspended and the erase operation in other partition is also suspended, the suspended program operation should be resumed first, and then the suspended erase operation should be ...
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Table 7. Functions of Block Lock Current State (1) State WP [000 (3) [001] [011 [100 ( [101] ( [110] [111 NOTES ...
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Table 9. Block Locking State Transitions upon WP# Transition Current State Previous State State WP# - [000] - [001] (2) [011] [110] Other than (2) [110] - [100] - [101] - [110] - [111] NOTES: 1. "WP#=0→1" means that WP# ...
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WSMS BESS BEFCES 7 6 SR.15 - SR.8 = RESERVED FOR FUTURE ENHANCEMENTS (R) SR.7 = WRITE STATE MACHINE STATUS (WSMS Ready 0 = Busy SR.6 = BLOCK ERASE SUSPEND STATUS (BESS ...
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SMS XSR.15-8 = RESERVED FOR FUTURE ENHANCEMENTS (R) XSR.7 = STATE MACHINE STATUS (SMS Page Buffer Program available 0 = Page Buffer Program not available XSR.6-0 = RESERVED FOR FUTURE ENHANCEMENTS ...
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PCR.15-11 = RESERVED FOR FUTURE ENHANCEMENTS (R) PCR.10-8 = PARTITION CONFIGURATION (PC2-0) 000 = No partitioning. Dual Work is not allowed. 001 = Plane1-3 are merged into one partition. (default in a ...
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Electrical Specifications 1.1 Absolute Maximum Ratings Operating Temperature During Read, Erase and Program ...-40°C to +85°C Storage Temperature During under Bias............................... -40°C to +85°C During non Bias................................ -65°C to +125°C Voltage On Any Pin (except V )............................ -0.5V to ...
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Capacitance (T =+25°C, f=1MHz) A Parameter Symbol Input Capacitance WP# Input Capacitance Output Capacitance NOTE: 1. Sampled, not 100% tested. 1.2.2 AC Input/Output Test Conditions V CC INPUT 0.0 AC test inputs are driven at V Input timing ...
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DC Characteristics Symbol Parameter I Input Load Current LI I Output Leakage Current Standby Current CCS Automatic Power Savings Current CCAS Reset Current CCD CC Average V Read CC Current ...
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Symbol Parameter V Input Low Voltage IL V Input High Voltage IH V Output Low Voltage OL V Output High Voltage Lockout Voltage LKO CC NOTES: 1. All currents are in RMS unless otherwise noted. Typical values ...
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AC Characteristics - Read-Only Operations Symbol t Read Cycle Time AVAV t Address to Output Delay AVQV t CE# to Output Delay ELQV t Page Address Access Time APA t OE# to Output Delay GLQV t RST# High to ...
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(A) (A) 21-0 20 EHEL V IH CE# ( OE# ( (W) WE (D/Q) 15 ...
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(A) (A) 21-3 20 (A) 2 (E) CE OE# ( WE# ( High ...
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(A) (A) 21-3 20 (A) 2 (E) CE OE# ( WE# ( GLQX t ELQX V ...
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AC Characteristics - Write Operations Symbol t Write Cycle Time AVAV RST# High Recovery to WE# (CE#) Going Low PHWL PHEL CE# (WE#) Setup to WE# (CE#) Going Low ELWL WLEL t (t ...
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A (A) 21-0 LHF64FHG Figure 10. AC Waveform for Write Operations 26 Rev. 2.45 ...
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Reset Operations V IH RST# ( High (D/Q) 15 RST# ( High (D/Q) 15 (min GND V ...
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Block Erase, Full Chip Erase, (Page Buffer) Program and OTP Program Performance Symbol Parameter 4K-Word Parameter Block t WPB Program Time 32K-Word Main Block t WMB Program Time t / WHQV1 Word Program Time t EHQV1 t / WHOV1 ...
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Related Document Information Document No. FUM00701 NOTE: 1. International customers should contact their local SHARP or distribution sales offices. LHF64FHG (1) Document Name LH28F640BF series Appendix 29 Rev. 2.45 ...
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... LH28F640BFXX-XXXXXX Flash MEMORY ERRATA 1. Electrical Specifications PROBLEM The table below summarizes the Operating Conditions. Electrical Specifications - Operating Conditions Parameter V Supply Voltage CC WORKAROUND V Supply Voltage should not be over 3.3V. CC STATUS This is intended to be fixed in future devices. Symbol Max. Unit V 3 040226 ...
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A-1 RECOMMENDED OPERATING CONDITIONS A-1.1 At Device Power-Up AC timing illustrated in Figure A-1 is recommended for the supply voltages and the control signals at device power-up. If the timing in the figure is ignored, the device may not operate ...
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A-1.1.1 Rise and Fall Time Symbol t V Rise Time Input Signal Rise Time R t Input Signal Fall Time F NOTES: 1. Sampled, not 100% tested. 2. This specification is applied for not only the device ...
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A-1.2 Glitch Noises Do not input the glitch noises which are below V as shown in Figure A-2 (b). The acceptable glitch noises are illustrated in Figure A-2 (a). Input Signal V (Min (Max.) IL Input Signal (a) ...
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... A-2 RELATED DOCUMENT INFORMATION Document No. AP-001-SD-E AP-006-PT-E AP-007-SW-E NOTE: 1. International customers should contact their local SHARP or distribution sales office. (1) Document Name Flash Memory Family Software Drivers Data Protection Method of SHARP Flash Memory RP#, V Electric Potential Switching Circuit PP iv Rev. 1.10 ...
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A-3 STATUS REGISTER READ OPERATIONS If AC timing for reading the status register described in specifications is not satisfied, a system processor can check the status register bit SR.15 instead of SR.7 to determine when the erase or program operation ...
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