TB28F400BVT80 Intel, TB28F400BVT80 Datasheet - Page 12
![no-image](/images/manufacturer_photos/0/3/336/intel_sml.jpg)
TB28F400BVT80
Manufacturer Part Number
TB28F400BVT80
Description
Manufacturer
Intel
Datasheet
1.TB28F400BVT80.pdf
(57 pages)
Specifications of TB28F400BVT80
Density
4Mb
Access Time (max)
80ns
Interface Type
Parallel
Boot Type
Top
Address Bus
19/18Bit
Operating Supply Voltage (typ)
3.3/5V
Operating Temp Range
-40C to 85C
Package Type
SOP
Sync/async
Asynchronous
Operating Temperature Classification
Industrial
Operating Supply Voltage (min)
3/4.5V
Operating Supply Voltage (max)
3.6/5.5V
Word Size
8/16Bit
Number Of Words
512K/256K
Supply Current
70mA
Mounting
Surface Mount
Pin Count
44
Lead Free Status / Rohs Status
Not Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TB28F400BVT80
Manufacturer:
INTEL
Quantity:
5 000
Part Number:
TB28F400BVT80
Manufacturer:
INTEL
Quantity:
20 000
4-MBIT SmartVoltage BOOT BLOCK FAMILY
12
WP#
BYTE#
V
V
GND
NC
CC
PP
Symbol
INPUT
INPUT
Type
WRITE PROTECT: Provides a method for unlocking the boot block in a system
without a 12 V supply.
When WP# is at logic low, the boot block is locked, preventing program and
erase operations to the boot block. If a program or erase operation is attempted
on the boot block when WP# is low, the corresponding status bit (bit 4 for
program, bit 5 for erase) will be set in the status register to indicate the operation
failed.
When WP# is at logic high, the boot block is unlocked and can be
programmed or erased.
NOTE: This feature is overridden and the boot block unlocked when RP# is at
V
BYTE# ENABLE: Not available on 28F004B. Controls whether the device
operates in the byte-wide mode (x8) or the word-wide mode (x16). BYTE# pin
must be controlled at CMOS levels to meet the CMOS current specification in the
standby mode.
When BYTE# is at logic low, the byte-wide mode is enabled, where data is
read and programmed on DQ
address that decodes between the upper and lower byte. DQ
during the byte-wide mode.
When BYTE# is at logic high, the word-wide mode is enabled, where data is
read and programmed on DQ
DEVICE POWER SUPPLY: 5.0 V
PROGRAM/ERASE POWER SUPPLY: For erasing memory array blocks or
programming data in each block, a voltage either of 5 V
be applied to this pin. When V
against Program and Erase commands.
GROUND: For all internal circuitry.
NO CONNECT: Pin may be driven or left floating.
HH
Table 2. 28F400/004 Pin Descriptions (Continued)
. See Section 3.4 for details on write protection.
SEE NEW DESIGN RECOMMENDATIONS
0
0
PP
–DQ
–DQ
Name and Function
< V
7
15
PPLK
and DQ
10%, 3.3
.
all blocks are locked and protected
15
/A
0.3 V, 2.7 V–3.6 V (BE/CE only)
–1
becomes the lowest order
10% or 12 V
8
–DQ
14
are tri-stated
5% must