TE28F800B3B110 Intel, TE28F800B3B110 Datasheet - Page 37

• Manufacturer Part Number: TE28F800B3B110
• Manufacturer: Intel

Specifications of TE28F800B3B110

• Lead Free Status / Rohs Status: Not Compliant

8.0
8.1
Table 15.
Datasheet
R1
R2
R3
R4
R5
R6
R7
R8
R9
R10
Notes:
1.
2.
3.
4.
#
OE# can be delayed up to t
Sampled, but not 100% tested.
See
See
input slew rate.
t
t
t
t
t
t
t
t
t
t
AVAV
AVQV
ELQV
GLQV
PHQV
ELQX
GLQX
EHQZ
GHQZ
OH
Sym
Figure 10 “Read Operation Waveform” on page
Figure 12 “AC Input/Output Reference Waveform” on page 46
Read Cycle Time
Address to Output Delay
CE# to Output Delay
OE# to Output Delay
RP# to Output Delay
CE# to Output in Low Z
OE# to Output in Low Z
CE# to Output in High Z
OE# to Output in High Z
Output Hold from
Address, CE#, or OE#
Change, Whichever
Occurs First
AC Characteristics
AC Read Characteristics
Read Operations—8-Mbit Density
Parameter
Intel
ELQV–
Product
Density
®
Order Number: 290580, Revision: 020
V
t
Advanced Boot Block Flash Memory (B3)
GLQV
CC
Note
1,3,4
1,3,4
2,3,4
2,3,4
2,3,4
2,3,4
2,3,4
3,4
3,4
3,4
after the falling edge of CE# without impact on t
3.0 V – 3.6 V
Min
80
0
0
0
28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
40.
Max
150
80
80
30
20
20
90 ns
2.7 V – 3.6 V
Min
90
0
0
0
for timing measurements and maximum allowable
Max
150
90
90
30
20
20
8 Mbit
3.0 V – 3.6 V
Min
100
0
0
0
ELQV
Max
100
150
100
30
20
20
110 ns
.
2.7 V – 3.6 V
Min
110
0
0
0
18 Aug 2005
Max
110
110
150
30
20
20
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
37