TE28F800B3B110 Intel, TE28F800B3B110 Datasheet - Page 7

• Manufacturer Part Number: TE28F800B3B110
• Manufacturer: Intel

Specifications of TE28F800B3B110

• Lead Free Status / Rohs Status: Not Compliant

1.0
1.1
Table 1.
Datasheet
Introduction
This datasheet describes the specifications for the Intel Advanced Boot Block Flash Memory (B3)
device (hereafter referred to as the B3 flash memory device).
The B3 flash memory device is optimized for portable, low-power, systems. This family of
products features 1.65 V to 2.5 V or 2.7 V to 3.6 V I/Os, and a low V
2.7 V to 3.6 V for Read, Program, and Erase operations. The B3 device is also capable of fast
programming at 12 V.
Throughout this document:
Nomenclature
Nomenclature
0x
0b
Byte
Word
KW or Kword
Mword
Kb
KB
Mb
MB
APS
CSP
CUI
OTP
PR
PRD
PLR
RFU
SR
SRD
WSM
•
•
2.7 V refers to the full voltage range 2.7 V to 3.6 V (except where noted otherwise).
V
PP
Term
= 12 V refers to 12 V ±5%.
Intel
Hexadecimal prefix
Binary prefix
8 bits
16 bits
1024 words
1,048,576 words
1024 bits
1024 bytes
1,048,576 bits
1,048,576 bytes
Automatic Power Savings
Chip Scale Package
Command User Interface
One Time Programmable
Protection Register
Protection Register Data
Protection Lock Register
Reserved for Future Use
Status Register
Status Register Data
Write State Machine
®
Order Number: 290580, Revision: 020
Advanced Boot Block Flash Memory (B3)
Definition
28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
CC
/V
PP
operating range of
18 Aug 2005
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