TE28F800B3T90 Intel, TE28F800B3T90 Datasheet - Page 27

• Manufacturer Part Number: TE28F800B3T90
• Manufacturer: Intel

Specifications of TE28F800B3T90

• Cell Type: NOR
• Density: 8Mb
• Access Time (max): 90ns
• Interface Type: Parallel
• Boot Type: Top
• Address Bus: 19b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 16b
• Number Of Words: 512K
• Supply Current: 18mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

5.0
5.1
5.1.1
Figure 5.
Datasheet
Pinout and Signal Descriptions
This section explains the package pinout and signal descriptions.
Signal Pinouts
The B3 flash memory device is available in the following packages:
40-Lead and 48-Lead TSOP Packages
40-Lead TSOP Package for x8 Configurations
Notes:
1.
2.
•
•
•
•
40-lead TSOP (x8,
48-lead TSOP (x16,
48-ball µBGA (x8 in
48-ball VF BGA (x16,
40-Lead TSOP available for 8-Mbit and 16-Mbit densities only.
Lower densities have NC on the upper address pins. For example, an 8-Mbit device has NC on Pin 38.
4 M
Intel
A
A
A
A
A
A
A
A
WE#
RP#
V
WP#
A
A
A
A
A
A
A
A
16
15
14
13
12
11
9
8
PP
18
7
6
5
4
3
2
1
®
Order Number: 290580, Revision: 020
Advanced Boot Block Flash Memory (B3)
Figure
Figure
Figure 8
Figure
10
11
12
13
14
15
16
17
18
19
20
1
2
3
4
5
6
7
8
9
5).
6).
9).
and x16 in
28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
Advanced Boot Block
10 mm x 20 mm
40-Lead TSOP
TOP VIEW
Figure
9).
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
A
GND
A
A
A
DQ
DQ
DQ
DQ
V
V
NC
DQ
DQ
DQ
DQ
OE#
GND
CE#
A
17
20
19
10
CCQ
CC
0
7
6
5
4
3
2
1
0
16 M
18 Aug 2005
8 M
27