TE28F800B3T90 Intel, TE28F800B3T90 Datasheet - Page 30

• Manufacturer Part Number: TE28F800B3T90
• Manufacturer: Intel

Specifications of TE28F800B3T90

• Cell Type: NOR
• Density: 8Mb
• Access Time (max): 90ns
• Interface Type: Parallel
• Boot Type: Top
• Address Bus: 19b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 16b
• Number Of Words: 512K
• Supply Current: 18mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / Rohs Status: Not Compliant

28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3
Figure 9.
5.2
18 Aug 2005
30
x16 48-Ball VF BGA and µBGA* Chip Size Package (Top View, Ball Down)
Notes:
1.
2.
Signal Descriptions
Table 10
A19, A20, and A21 indicate the upgrade address connections. Lower density devices do not have the
upper address solder balls. Do not route in this area.
Table 10 “B3 Flash memory Device Signal Descriptions” on page 31
pin.
– A
– A
– A
describes the active signals.
19
20
21
is the upgrade address for the 16-Mbit device.
is the upgrade address for the 32-Mbit device.
is the upgrade address for the 64-Mbit device.
A
B
C
D
E
F
Intel
V
A13
A14
A15
A16
Vss
®
CCQ
Order Number: 290580, Revision: 020
1
Advanced Boot Block Flash Memory (B3)
D14
D15
A11
A10
A12
D7
2
WE#
D13
A8
A9
D5
D6
3
64M
RP#
A21
D11
D12
V
D4
4
PP
32M
WP#
A18
A20
V
D2
D3
5
CC
16M
A19
A17
D10
A6
D8
D9
6
details the usage of each device
CE#
D0
D1
A7
A5
A3
7
OE#
Vss
A4
A2
A1
A0
8
Datasheet