PDTC143TM NXP Semiconductors, PDTC143TM Datasheet - Page 5

PDTC143TM

Manufacturer Part Number
PDTC143TM
Description
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PDTC143TM

Transistor Polarity
NPN
Collector-emitter Voltage
50V
Dc Current Gain (min)
200
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-883
Lead Free Status / Rohs Status
Compliant
NXP Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.
CHARACTERISTICS
T
2004 Aug 06
R
I
I
I
h
V
R1
C
SYMBOL
amb
CBO
CEO
EBO
SYMBOL
FE
CEsat
NPN resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
th(j-a)
c
= 25 °C unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
input resistor
collector capacitance
thermal resistance from junction to ambient
SOT54
SOT23
SOT346
SOT323
SOT490
SOT883
SOT416
PARAMETER
PARAMETER
V
V
V
V
V
I
f = 1 MHz
C
E
CB
CE
CE
EB
CE
= i
= 5 mA; I
= 5 V; I
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
e
= 0 A; V
5
CONDITIONS
C
B
C
in free air
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3
note 1
E
B
B
= 0.25 mA
= 0 A
= 1 mA
CB
= 0 A
= 0 A
= 0 A; T
CONDITIONS
= 10 V;
j
= 150 °C
200
3.3
MIN.
PDTC143T series
VALUE
250
500
500
625
500
500
833
4.7
TYP.
Product data sheet
100
1
50
100
100
6.1
2.5
MAX.
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
K/W
nA
μA
μA
nA
mV
pF
UNIT

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