BGY288 NXP Semiconductors, BGY288 Datasheet - Page 6

• Manufacturer Part Number: BGY288
• Manufacturer: NXP Semiconductors

Specifications of BGY288

• Mounting: Surface Mount
• Pin Count: 16
• Lead Free Status / Rohs Status: Supplier Unconfirmed

Philips Semiconductors
9397 750 14011
Preliminary data sheet
6.1 Ramp-up
6.2 Ramp-down
V
loop activates).
BAND selects the correct transmit channel (GSM850/EGSM900, or DCS1800/PCS1900).
BAND must be at the correct value before the rising edge of TXON.
The transition of TXON to HIGH enables the power control loop; the TXON minimum t
period is a set-up time which allows the correct internal biasing conditions and the charge
on the integration capacitors to be at the correct starting value before PC starts to
increase. RF power must be present at the input of the selected channel (P
before PC starts to ramp-up.
The required RF output power level is reached by increasing PC in steps to the
corresponding voltage level. The sequence of PC steps can be chosen to have
approximately a quarter cosine wave ramp-up of P
violation of the GSM power mask, and at the same time prevent violation of the spectrum
due to transients.
To avoid violation of the lowest power level in the GSM power mask (indicated by *;
see
at minimum value and RF power at input of power amplifier.
In LB TX mode, the system specification for maximum output power of the handset is
handset is 48 dBm. In BGY288 transmit mode, the handset antenna switch can be used
to provide isolation between the power amplifier and the antenna by setting the antenna
switch to Rx mode. This condition is used for the transmit mode isolation parameters
given in
PC steps down from the voltage level for the current power level to off state. The
sequence of PC steps can be chosen to have approximately a quarter cosine wave
ramp-down of P
the same time prevent violation of the spectrum due to transients.
The power control loop can be switched off (TXON goes LOW) as soon as PC has
reached the off state level. At the same time, BAND is allowed to change polarity and the
RF input power at the selected channel (P
power is removed, there is no additional isolation specification required to meet the GSM
system specification. In LB TX mode, the system specification for maximum output power
of the handset is 54 dBm. In HB TX mode the system specification for maximum output
power is 48 dBm.
At minimum t
charge in the power control loop capacitors is removed, the BGY288 can go into Idle
mode (V
36 dBm. In HB TX mode, the system specification for maximum output power of the
STAB
Figure
voltage must be available at minimum t
Section
STAB
3), the BGY288 provides sufficient isolation when TXON goes HIGH with PC
d6
= 0 V).
after TXON goes LOW (power control loop deactivates) and when all
L(LB)
9.
or P
Rev. 01 — 2 February 2005
L(HB)
in order to prevent violation of the GSM power mask, and at
D(LB)
Power amplifier with integrated control loop
d1
or P
before TXON goes HIGH (power control
L(LB)
D(HB)
or P
) can be removed. When input
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
L(HB)
in order to prevent
BGY288
D(LB)
or P
D(HB)
6 of 22
d4
)