BLW96 NXP Semiconductors, BLW96 Datasheet - Page 4

• Manufacturer Part Number: BLW96
• Description: NPN silicon planar epitaxial transistor intended for use in class-A,AB and B operated high power industrial and military transmitting equipment in the HF and VHF band
• Manufacturer: NXP Semiconductors

Specifications of BLW96

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 55V
• Emitter-base Voltage: 4V
• Collector Current (dc) (max): 12A
• Dc Current Gain (min): 15
• Power Dissipation: 340W
• Frequency (max): 245MHz
• Operating Temp Range: -65C to 200C
• Operating Temperature Classification: Military
• Mounting: Screw
• Pin Count: 4
• Lead Free Status / Rohs Status: Compliant

Philips Semiconductors
CHARACTERISTICS
T
Notes
1. Measured under pulse conditions: t
2. Measured under pulse conditions: t
August 1986
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Second breakdown energy; L = 25 mH; f = 50 Hz
D.C. current gain
D.C. current gain ratio of matched devices
Collector-emitter saturation voltage
Transition frequency at f = 100 MHz
Collector capacitance at f = 1 MHz
Feedback capacitance at f = 1 MHz
Collecting-flange capacitance
j
= 25 C
HF/VHF power transistor
V
open base; I
open collector; I
V
open base
R
I
I
I
I
I
C
C
C
E
C
I
I
BE
BE
BE
E
E
= I
= 7 A; V
= 7 A; V
= 20 A; I
= 150 mA; V
= 7 A; V
= 20 A; V
= 0; I
= 0; V
e
= 10
= 0; V
C
CE
CE
CE
B
= 50 mA
C
CB
= 4 A
CB
CB
= 55 V
= 5 V
= 5 V
= 200 mA
(1)
CE
= 50 V
E
= 45 V
= 45 V
= 20 mA
= 50 V
(1)
(2)
p
p
300 s;
(1)
50 s;
0,02.
0,01.
4
V
V
V
I
E
E
h
h
V
f
f
C
C
C
CES
T
T
FE
FE1
(BR)CES
(BR)CEO
(BR)EBO
SBO
SBR
CEsat
c
re
cf
/h
FE2
typ.
typ.
typ.
typ.
typ.
typ.
typ.
15 to
Product specification
235 MHz
245 MHz
280 pF
170 pF
110 V
1,2
1,9 V
4,4 pF
55 V
10 mA
20 mJ
20 mJ
30
50
BLW96
4 V