BZA100 NXP Semiconductors, BZA100 Datasheet - Page 4

18-fold monolitic transient voltagesuppressor

BZA100

Manufacturer Part Number
BZA100
Description
18-fold monolitic transient voltagesuppressor
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BZA100

Number Of Elements
18
Polarity
Uni-Directional
Package Type
SO
Operating Temperature Classification
Military
Clamping Voltage
11V
Reverse Stand-off Voltage
7.2V
Leakage Current (max)
2uA
Peak Pulse Current
2.5A
Peak Pulse Power Dissipation
27.5W
Operating Temp Range
-65C to 150C
Mounting
Surface Mount
Pin Count
20
Lead Free Status / Rohs Status
Compliant

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Quantity
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NXP Semiconductors
GRAPHICAL DATA
1997 Dec 02
handbook, halfpage
handbook, halfpage
18-fold ESD transient voltage suppressor
P
V
Fig.4
ZSM
ZSM
P ZSM
(W)
I ZSM
10
(A)
Fig.2
10
= V
is the non-repetitive peak reverse voltage at I
10
10
−1
10
10
1
1
2
ZSM
−1
−1
Maximum non-repetitive peak reverse power
dissipation as a function of pulse duration
(square pulse).
× I
Maximum non-repetitive peak reverse
current as a function of pulse time.
ZSM
.
1
1
10
10
10
10
2
2
ZSM
t p (ms)
t p (ms)
MBG394
MBG395
.
10
10
3
3
4
handbook, halfpage
handbook, halfpage
T
j
All diodes loaded.
= 25 °C; f = 1 MHz.
Fig.5
P tot
(W)
(pF)
C d
100
2.4
1.6
0.8
80
60
40
0
0
0
Diode capacitance as a function of reverse
voltage; typical values.
Fig.3 Power derating curve.
50
2
100
4
Product data sheet
V R (V)
T s (
o
BZA100
MBG393
C)
MBG392
150
6

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