BAS56 NXP Semiconductors, BAS56 Datasheet - Page 5

The BAS56 consists of two high-speedswitching diodes fabricated inplanar technology, and encapsulatedin the small rectangular plastic SMDSOT143 package

BAS56

Manufacturer Part Number
BAS56
Description
The BAS56 consists of two high-speedswitching diodes fabricated inplanar technology, and encapsulatedin the small rectangular plastic SMDSOT143 package
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAS56

Rectifier Type
Switching Diode
Configuration
Dual Parallel
Peak Rep Rev Volt
120V
Avg. Forward Curr (max)
0.2A
Rev Curr
0.1uA
Peak Non-repetitive Surge Current (max)
9A
Forward Voltage
1V
Operating Temp Range
-65C to 150C
Package Type
SOT-143B
Rev Recov Time
6ns
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3 +Tab
Lead Free Status / Rohs Status
Compliant

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NXP Semiconductors
BAS56
Product data sheet
Fig 1.
Fig 3.
(mA)
(1) V
(2) V
(μA)
10
10
I
300
200
100
10
F
I
R
10
−1
−2
0
2
1
0
T
Forward current as a function of forward
voltage; typical values
Reverse current as a function of junction
temperature
0
j
R
R
= 25 °C
= 60 V; maximum values
= 60 V; typical values
(1)
100
(2)
1
T
V
j
F
(°C)
(V)
All information provided in this document is subject to legal disclaimers.
mbh279
mbh282
200
2
Rev. 3 — 29 June 2010
Fig 2.
Fig 4.
I
FSM
(A)
10
(pF)
C
10
2.0
1.5
1.0
0.5
10
d
−1
1
0
2
1
Based on square wave currents.
T
Non-repetitive peak forward current as a
function of pulse duration
0
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
j
= 25 °C; prior to surge
10
j
= 25 °C
10
10
2
High-speed double diode
20
10
© NXP B.V. 2010. All rights reserved.
3
V
R
t
p
(V)
(μs)
mbg703
mbh283
BAS56
10
30
4
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