BC849CW NXP Semiconductors, BC849CW Datasheet - Page 2

• Manufacturer Part Number: BC849CW
• Manufacturer: NXP Semiconductors

Specifications of BC849CW

• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 30V
• Collector-base Voltage: 30V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 100mA
• Dc Current Gain (min): 420
• Power Dissipation: 200mW
• Frequency (max): 100MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SC-70
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• Low noise stages in tape recorders, hi-fi amplifiers and
DESCRIPTION
NPN transistor in a SOT323 plastic package.
PNP complements: BC859W and BC860W.
MARKING
Note
1. ∗ = - : Made in Hong Kong.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 12
BC849BW
BC849CW
V
V
V
I
I
I
P
T
T
T
C
CM
BM
SYMBOL
other audio-frequency equipment.
NUMBER
stg
j
amb
CBO
CEO
EBO
tot
NPN general purpose transistors
∗ = t : Made in Malaysia.
TYPE
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
MARKING
BC849W
BC850W
BC849W
BC850W
CODE
2B∗
2C∗
(1)
PARAMETER
BC850BW
BC850CW
NUMBER
TYPE
MARKING
CODE
2G∗
2F∗
open emitter
open base
open collector
T
(1)
amb
≤ 25 °C; note 1
2
CONDITIONS
PINNING
handbook, halfpage
Fig.1
PIN
1
2
3
Simplified outline (SOT323) and symbol.
Top view
base
emitter
collector
1
3
−
−
−
−
−
−
−
−
−
−65
−
−65
BC849W; BC850W
MIN.
DESCRIPTION
2
MAM062
30
50
30
45
5
100
200
200
200
+150
150
+150
Product data sheet
MAX.
1
3
2
V
V
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT