PHC21025 NXP Semiconductors, PHC21025 Datasheet - Page 13

• Manufacturer Part Number: PHC21025
• Description: Intermediate level N-channel and P-channel complementary pair enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of PHC21025

• Number Of Elements: 2
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 30V
• Gate-source Voltage (max): 20V
• Power Dissipation: 2W
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SO
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
8. Revision history
Table 7.
PHC21025
Product data sheet
Document ID
PHC21025 v.4
Modifications:
PHC21025 v.3
Revision history
Release date
20110317
20101217
•
Various changes to content.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product data sheet
Rev. 04 — 17 March 2011
Change notice
-
-
Complementary intermediate level FET
PHC21025
Supersedes
PHC21025 v.3
PHC21025 v.2
© NXP B.V. 2011. All rights reserved.
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