71V416S12YG IDT, Integrated Device Technology Inc, 71V416S12YG Datasheet

71V416S12YG

Manufacturer Part Number

71V416S12YG

Description

Manufacturer

IDT, Integrated Device Technology Inc

Datasheet

1.71V416S12YG.pdf (9 pages)

Specifications of 71V416S12YG

Density

4Mb

Access Time (max)

12ns

Sync/async

Asynchronous

Architecture

Not Required

Clock Freq (max)

Not RequiredMHz

Operating Supply Voltage (typ)

3.3V

Address Bus

18b

Package Type

SOJ

Operating Temp Range

0C to 70C

Number Of Ports

Supply Current

180mA

Operating Supply Voltage (min)

Operating Supply Voltage (max)

3.6V

Operating Temperature Classification

Commercial

Mounting

Surface Mount

Pin Count

Word Size

16b

Number Of Words

256K

Lead Free Status / Rohs Status

Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

71V416S12YG

Manufacturer:

IDT

Quantity:

20 000

Current page: 1 of 9
Download datasheet (2Mb)

◆ ◆ ◆ ◆ ◆

Features

Functional Block Diagram

256K x 16 advanced high-speed CMOS Static RAM

JEDEC Center Power / GND pinout for reduced noise.

Equal access and cycle times

– Commercial and Industrial: 10/12/15ns

One Chip Select plus one Output Enable pin

Bidirectional data inputs and outputs directly

LVTTL-compatible

Low power consumption via chip deselect

Upper and Lower Byte Enable Pins

Single 3.3V power supply

Available in 44-pin, 400 mil plastic SOJ package and a 44-

pin, 400 mil TSOP Type II package and a 48 ball grid array,

9mm x 9mm package.

A0 - A17

BHE

BLE

Address

Buffers

Write

Enable

Buffer

Output

Enable

Buffer

Chip

Select

Buffer

Byte

Enable

Buffers

3.3V CMOS Static RAM

4 Meg (256K x 16-Bit)

4,194,304-bit

Row / Column

Decoders

Memory

Array

Description

as 256K x 16. It is fabricated using IDT’s high-perfomance, high-reliability

CMOS technology. This state-of-the-art technology, combined with inno-

vative circuit design techniques, provides a cost-effective solution for high-

speed memory needs.

5ns, with address access times as fast as 10ns. All bidirectional inputs and

outputs of the IDT71V416 are LVTTL-compatible and operation is from a

single 3.3V supply. Fully static asynchronous circuitry is used, requiring

no clocks or refresh for operation.

44-pin, 400 mil TSOP Type II package and a 48 ball grid array, 9mm x

9mm package.

The IDT71V416 is a 4,194,304-bit high-speed Static RAM organized

The IDT71V416 has an output enable pin which operates as fast as

The IDT71V416 is packaged in a 44-pin, 400 mil Plastic SOJ and a

Drivers

Sense

Amps

Write

and

Output

Buffer

Write

High

Byte

High

Byte

Low

OCTOBER 2008

IDT71V416S

IDT71V416L

3624 drw 01

I/O 15

I/O 8

I/O 7

I/O 0

DSC-3624/09

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71V416S12YG Summary of contents

Page 1

Features ◆ ◆ ◆ ◆ ◆ 256K x 16 advanced high-speed CMOS Static RAM ◆ ◆ ◆ ◆ ◆ JEDEC Center Power / GND pinout for reduced noise. ◆ ◆ ◆ ◆ ◆ Equal access and cycle times – Commercial ...

Page 2

IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Pin Configurations - SOJ/TSOP SO44-1 ...

Page 3

IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Absolute Maximum Ratings Symbol Rating V Supply Voltage Relative Terminal Voltage Relative IN, OUT Temperature Under Bias BIAS T ...

IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) DC Electrical Characteristics (V = Min. to Max., Commercial and Industrial Temperature Ranges) DD Symbol Parameter |I | Input Leakage Current Output Leakage Current LO V ...

Page 5

IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) AC Electrical Characteristics (V = Min. to Max., Commercial and Industrial Temperature Ranges) DD Symbol Parameter READ CYCLE t Read Cycle Time RC t Address Access Time AA t ...

Page 6

IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Timing Waveform of Read Cycle No. 2 ADDRESS OE CS BHE, BLE DATA OUT NOTES HIGH for Read Cycle. 2. Address must be valid prior to ...

Page 7

IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Timing Waveform of Write Cycle No. 2 (CS Controlled Timing) ADDRESS BHE, BLE WE DATA OUT DATA IN Timing Waveform of Write Cycle No. 3 (BHE, ...

Page 8

IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Ordering Information X 71V416 X Die Device Power Revistion Type X XX XXX X Process/ Speed Package Temperature Range 6.42 8 Commercial and Industrial Temperature Ranges Blank Commercial (0°C ...

Page 9

IDT71V416S, IDT71V416L, 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) Datasheet Document History 08/5/99 Updated to new format Pg 6 Revised footnote for Write Cycle No. 1 diagram 08/31/99 Pg. 1–9 Added Industrial temperature range offering ...

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