E28F008SA85 Intel, E28F008SA85 Datasheet - Page 40

• Manufacturer Part Number: E28F008SA85
• Manufacturer: Intel

Specifications of E28F008SA85

• Density: 8Mb
• Access Time (max): 85ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 20b
• Operating Supply Voltage (typ): 5V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP
• Program/erase Volt (typ): 11.4 to 12.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Word Size: 8b
• Number Of Words: 1M
• Supply Current: 50mA
• Mounting: Surface Mount
• Pin Count: 40
• Lead Free Status / Rohs Status: Not Compliant

28F008SA
9.14
NOTES:
1.
2.
3.
4.
5.
6.
7.
40
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AVAV
PHEL
WLEL
ELEH
VPEH
AVEH
DVEH
EHDX
EHAX
EHWH
EHEL
EHRL
EHQV
EHQV
EHGL
QVVL
Chip-Enable Controlled Writes: Write operations are driven by the valid combination of CE# and WE#. In systems where
CE# defines the write pulsewidth (within a longer WE# timing waveform), all setup, hold and inactive WE# times should be
measured relative to the CE# waveform.
Sampled, not 100% tested.
Refer to Table 3 for valid A
Refer to Table 3 for valid D
Byte write and block erase durations are measured to completion (SR.7 = 1, RY/BY# = V
until determination of byte write/block erase success (SR.3/4/5 = 0)
See High Speed AC Input/Output Reference Waveforms and High Speed AC Testing Load Circuits for testing
characteristics.
See AC Input/Output Reference Waveforms and AC Testing Load Circuits for testing characteristics.
Symbol
1
2
Alternative CE#-Controlled Writes— Extended Temperature Operation
t
t
t
t
t
t
t
t
t
t
t
t
WC
PS
WS
CP
VPS
AS
DS
DH
AH
WH
EPH
VPH
Write Cycle Time
RP# High Recovery to CE# Going Low
WE# Setup to CE# Going Low
CE# Pulse Width
V
Address Setup to CE# Going High
Data Setup to CE# Going High
Data Hold from CE# High
Address Hold from CE# High
WE# Hold from CE# High
CE# Pulse Width High
CE# High to RY/BY# Going Low
Duration of Byte Write Operation
Duration of Block Erase Operation
Write Recovery before Read
V
PP
PP
Setup to CE# Going High
Hold from Valid SRD, RY/BY# High
Versions
IN
IN
for byte write or block erasure.
for byte write or block erasure.
Parameter
V
CC
Notes
2, 5
±10%
2
2
3
4
5
5
OH
28F008SA-100
Min
100
100
0.3
). V
50
40
40
25
PRELIMINARY
1
0
5
5
0
6
0
0
PP
should be held at V
Max
100
(7)
Unit
sec
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
ns
PPH