E28F008SA85 Intel, E28F008SA85 Datasheet - Page 7

• Manufacturer Part Number: E28F008SA85
• Manufacturer: Intel

Specifications of E28F008SA85

• Density: 8Mb
• Access Time (max): 85ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 20b
• Operating Supply Voltage (typ): 5V
• Operating Temp Range: 0C to 70C
• Package Type: TSOP
• Program/erase Volt (typ): 11.4 to 12.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Word Size: 8b
• Number Of Words: 1M
• Supply Current: 50mA
• Mounting: Surface Mount
• Pin Count: 40
• Lead Free Status / Rohs Status: Not Compliant

A
DQ
CE#
RP#
OE#
WE#
RY/BY#
V
V
GND
PRELIMINARY
Symbol
0
PP
CC
–A
0
–DQ
19
7
INPUT/OUTPUT
OUTPUT
INPUT
INPUT
INPUT
INPUT
INPUT
Type
ADDRESS INPUTS for memory addresses. Addresses are internally
latched during a write cycle.
DATA INPUT/OUTPUTS: Inputs data and commands during CUI
write cycles; outputs data during memory array, status register and
Identifier read cycles. The data pins are active high and float to tri-
state off when the chip is deselected or the outputs are disabled. Data
is internally latched during a write cycle.
CHIP ENABLE: Activates the device’s control logic, input buffers,
decoders, and sense amplifiers. CE# is active low; CE# high
deselects the memory device and reduces power consumption to
standby levels.
RESET/DEEP POWER-DOWN: Puts the device in deep power-down
mode. RP# is active low; RP# high gates normal operation. RP# also
locks out block erase or byte write operations when active low,
providing data protection during power transitions. RP# active resets
internal automation. Exit from deep power-down sets device to read-
array mode.
OUTPUT ENABLE: Gates the device’s outputs through the data
buffers during a read cycle. OE# is active low.
WRITE ENABLE: Controls writes to the CUI and array blocks. WE#
is active low. Addresses and data are latched on the rising edge of
the WE# pulse.
READY/BUSY#: Indicates the status of the internal Write State
Machine. When low, it indicates that the WSM is performing a block
erase or byte write operation. RY/BY# high indicates that the WSM is
ready for new commands, block erase is suspended or the device is
in deep power-down mode. RY/BY# is always active and does NOT
float to tri-state off when the chip is deselected or data outputs are
disabled.
BLOCK ERASE/BYTE WRITE POWER SUPPLY for erasing blocks
of the array or writing bytes of each block.
With V
DEVICE POWER SUPPLY (5 V ±10%, 5 V ±5%)
GROUND
Table 1. Pin Descriptions
PP
< V
PPLMAX
, memory contents cannot be altered.
Name and Function
NOTE:
28F008SA
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