933978490112 NXP Semiconductors, 933978490112 Datasheet - Page 12

933978490112

Manufacturer Part Number
933978490112
Description
Manufacturer
NXP Semiconductors
Datasheet

Specifications of 933978490112

Application
VHF
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
25A
Drain Source Voltage (max)
65V
Output Power (max)
300W
Power Gain (typ)@vds
15@28VdB
Frequency (max)
225MHz
Package Type
CDFM
Pin Count
5
Forward Transconductance (typ)
7.5S
Drain Source Resistance (max)
150@10Vmohm
Input Capacitance (typ)@vds
495@32VpF
Output Capacitance (typ)@vds
340@32VpF
Reverse Capacitance (typ)
40@32VpF
Operating Temp Range
-65C to 200C
Drain Efficiency (typ)
70%
Mounting
Screw
Mode Of Operation
CW Class-AB
Number Of Elements
2
Power Dissipation (max)
500000mW
Vswr (max)
10
Screening Level
Military
Lead Free Status / Rohs Status
Compliant
Philips Semiconductors
2003 Sep 26
handbook, halfpage
handbook, halfpage
VHF push-pull power MOS transistor
Class-AB operation; V
R
Fig.14 Input impedance as a function of frequency
Class-AB operation; V
R
Fig.16 Power gain as a function of frequency;
GS
GS
(dB)
G p
( )
Z i
= 536
= 536
20
16
12
2
1
0
1
2
8
4
0
150
150
(series components); typical values per
section.
typical values per section.
(per section); P
(per section); P
DS
DS
= 32 V; I
= 32 V; I
L
L
= 300 W.
= 300 W.
x i
r i
200
200
DQ
DQ
= 2
= 2
250 mA;
250 mA;
f (MHz)
f (MHz)
MGP242
MGP244
250
250
12
handbook, halfpage
Class-AB operation; V
R
Fig.15 Load impedance as a function of frequency
GS
( )
Z L
= 536
2
1
0
150
(series components); typical values per
section.
(per section); P
DS
R L
X L
= 32 V; I
L
= 300 W.
200
DQ
= 2
250 mA;
f (MHz)
Product specification
BLF368
MGP243
250

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