BF904 NXP Semiconductors, BF904 Datasheet - Page 7

• Manufacturer Part Number: BF904
• Description: Enhancement type Field-Effect Transistor in a plastic SOT143B package
• Manufacturer: NXP Semiconductors

Specifications of BF904

• Application: VHF/UHF
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 0.03A
• Drain Source Voltage (max): 7V
• Noise Figure (max): 2.8dB
• Frequency (max): 1GHz
• Package Type: SOT
• Pin Count: 3 +Tab
• Input Capacitance (typ)@vds: 2.2@5V@Gate 1/1.5@5V@Gate 2pF
• Output Capacitance (typ)@vds: 1.3@5VpF
• Reverse Capacitance (typ): 0.025@5VpF
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Number Of Elements: 2
• Power Dissipation (max): 200mW
• Screening Level: Military
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
handbook, halfpage
handbook, halfpage
N-channel dual gate MOS-FETs
V
R
V
R
Fig.14 Drain current as a function of gate 2 voltage;
(mA)
DS
G1
DS
G1
(mA)
I D
I D
Fig.12 Drain current as a function of gate 1
= 5 V; V
= 120 k (connected to V
= 5 V; T
= 120 k (connected to V
12
12
8
4
0
8
4
0
0
0
typical values; see Fig.20.
j
G2-S
= 25 C.
supply voltage (= V
see Fig.20.
= 4 V.
1
2
2
GG
GG
); T
).
j
= 25 C.
3
GG
); typical values;
4
V
GG
V
G2 S
4
V
= 5 V
GG
4 V
4.5 V
3.5 V
3 V
MLD275
MLD276
(V)
(V)
Rev. 06 - 13 November 2007
5
6
handbook, halfpage
handbook, halfpage
V
R
V
R
G2-S
DS
G1
G1
(mA)
( A)
I G1
I D
Fig.15 Gate 1 current as a function of gate 2
connected to V
= 5 V; T
= 120 k (connected to V
20
15
10
Fig.13 Drain current as a function of gate 1
= 4 V.
40
30
20
10
5
0
0
0
0
j
= 25 C.
voltage; typical values; see Fig.20.
(= V
typical values; see Fig.20.
GG
2
GG
; T
j
) and drain supply voltage;
R
= 25 C.
2
G1
GG
= 47 k
).
4
BF904; BF904R
V
GG
68 k
4
Product specification
V
= V
V
6
GG
G2 S
DS
= 5 V
100 k
120 k
150 k
180 k
220 k
(V)
4 V
4.5 V
3.5 V
3 V
MLD274
82 k
MLB945
(V)
7 of 14
8
6