STB80NF03L-04 STMicroelectronics, STB80NF03L-04 Datasheet - Page 3
![MOSFET Power N-Ch 30 Volt 80 Amp](/photos/26/99/269907/to-252_sml.jpg)
STB80NF03L-04
Manufacturer Part Number
STB80NF03L-04
Description
MOSFET Power N-Ch 30 Volt 80 Amp
Manufacturer
STMicroelectronics
Datasheet
1.STB80NF03L-04-1.pdf
(12 pages)
Specifications of STB80NF03L-04
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.004 Ohms
Forward Transconductance Gfs (max / Min)
50 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
80 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
D2PAK
Fall Time
95 ns
Minimum Operating Temperature
- 65 C
Rise Time
270 ns
Lead Free Status / Rohs Status
No
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STB80NF03L-04T4
Manufacturer:
ST
Quantity:
20 000
STB80NF03L-04
1
Electrical ratings
Table 2.
1. Limited by package
2. Pulse width limited by safe operating area
3. I
4. Starting Tj = 25°C, I
Table 3.
Rthj-case
Rthj-amb
Symbol
dv/dt
Symbol
E
I
SD
P
I
DM
V
I
V
T
D
AS
D
TOT
T
GS
T
DS
stg
(1)
(1)
(2)
j
≤ 80A, di/dt ≤ 240 A/µs, V
(4)
l
(3)
Absolute maximum ratings
Thermal data
Drain-source voltage (V
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Peak diode recovery voltage slope
Single pulse avalanche energy
Storage temperature
Operating junction temperature
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering purpose
D
= 80 A, V
DD
DD
Doc ID 16325 Rev 1
≤ V
= 50 V
C
Parameter
(BR)DSS,
= 25°C
Parameter
GS
= 0)
T
C
C
J
= 25°C
= 100°C
≤ T
JMAX
-60 to 175
Value
Value
62.5
±20
320
300
300
2.3
30
80
80
0.5
2
2
Electrical ratings
W/°C
°C/W
°C/W
Unit
V/ns
Unit
°C
W
°C
V
V
A
A
A
J
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