STB80NF03L-04 STMicroelectronics, STB80NF03L-04 Datasheet - Page 7

• Manufacturer Part Number: STB80NF03L-04
• Description: MOSFET Power N-Ch 30 Volt 80 Amp
• Manufacturer: STMicroelectronics

Specifications of STB80NF03L-04

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.004 Ohms
• Forward Transconductance Gfs (max / Min): 50 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: D2PAK
• Fall Time: 95 ns
• Minimum Operating Temperature: - 65 C
• Rise Time: 270 ns
• Lead Free Status / Rohs Status: No

STB80NF03L-04
Figure 8.
Figure 10. Normalized gate threshold voltage
Figure 12. Source-drain diode forward
Gate charge vs. gate-source voltage Figure 9.
vs. temperature
characteristics
Doc ID 16325 Rev 1
Figure 11. Normalized on-resistance vs.
Figure 13. Normalized breakdown voltage vs
Capacitance variations
temperature
temperature
Electrical characteristics
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