LX16EVK01/NOPB National Semiconductor, LX16EVK01/NOPB Datasheet - Page 8

• Manufacturer Part Number: LX16EVK01/NOPB
• Description: KIT EVAL FOR DS92LX1621/22
• Manufacturer: National Semiconductor

Specifications of LX16EVK01/NOPB

• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

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LVCMOS DC SPECIFICATIONS 3.3V I/O (SER INPUTS, DES OUTPUTS, GPIO, CONTROL INPUTS AND OUTPUTS)
V
V
I
V
V
I
I
LVCMOS DC SPECIFICATIONS 1.8V I/O (TX INPUTS, RX OUTPUTS, GPIO, CONTROL INPUTS AND OUTPUTS)
V
V
I
V
V
IN
OS
OZ
IN
Symbol
Supply Voltage ( V
Supply Voltage (V
LVCMOS Input Voltage (V
LVCMOS Input Voltage (V
LVCMOS Output Voltage (V
CML Driver I/O Voltage (V
CML Receiver I/O Voltage
(V
Junction Temperature
Storage Temperature
Maximum Package Power
Dissipation Capacity
Package Derating:
DS92LX1621 32L LLP
θ
θ
Maximum Package Power
Dissipation Capacity Package
Package Derating:
DS92LX1622 40L LLP
θ
IH
IL
OH
OL
IH
IL
OH
OL
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Serializer Electrical Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified.
DD1V8
JA
JC
JA
(based on 16 thermal vias)
(based on 9 thermal vias)
(based on 9 thermal vias)
)
High Level Input Voltage
Low Level Input Voltage
Input Current
High Level Output Voltage
Low Level Output Voltage
Output Short Circuit Current
TRI-STATE® Output Current
High Level Input Voltage
Low Level Input Voltage
Input Current
High Level Output Voltage
Low Level Output Voltage
DD3V3
DD1V8
Parameter
)
)
DD1V8
DD1V8
DD3V3
DD
)
)
)
)
−0.3V to +(V
−0.3V to +(V
−0.3V to (V
−0.3V to (V
1/θJA °C/W above +25°
1/θ
−0.3V to +(V
VIN = 3.0V to 3.6V
VIN = 3.0V to 3.6V
VIN = 0V or 3.6V
VIN = 3.0V to 3.6V
V
V
I
V
PDB = 0V,
V
V
V
V
V
V
I
V
I
OH
OH
OL
JA
DDIO
DDIO
OUT
OUT
IN
IN
IN
IN
DDIO
DDIO
°C/W above +25°
= +4 mA
−65°C to +150°C
= +4mA
= 1.71V to 1.89V
= 1.71V to 1.89V
= 0V or 1.89V
= 1.71V to 1.89V
= −4mA
−0.3V to +2.5V
−0.3V to +4.0V
= 0V
= 0V or V
= 3.0V to 3.6V
= 3.0V to 3.6V
= 1.71V to 1.89V
= 1.71V to 1.89V
(Note
DD1V8
DD3V3
DD1V8
DD1V8
DD
34.3 °C/W
28.0 °C/W
6.9 °C/W
+150°C
+ 0.3V)
+ 0.3V)
+ 0.3V)
+ 0.3V)
+ 0.3V)
1)
DD
Conditions
(Note
8
θ
ESD Rating (IEC 61000–4–2)
ESD Rating (HBM)
2,
Recommended Operating
Conditions
Serializer GPIO
Outputs
Deserializer
LVCMOS
Outputs
LVCMOS
Outputs
Air Discharge
RIN-)
Contact Discharge
RIN-)
V
V
V
Supply Noise
Operating Free Air
Temperature (T
Input Clock Rate
Note
JC
DD
DDIO
DDIO
(DOUT+, DOUT-, RIN+,
(DOUT+, DOUT-, RIN+,
V
V
V
(based on 16 thermal vias)
DDn
DDIO
DD3V3
(1.8V)
3,
(1.8V Mode)
(3.3V Mode)
(1.8V)
(1.8V)
Note
4)
A
)
0.65 V
V
GND
GND
GND
GND
0.45
DDIO
Min
2.0
-20
2.4
-20
-20
1.71
1.71
Min
-40
10
IN
-
3
Typ
-24
-39
Nom
±1
±1
±1
1.8
1.8
3.3
25
RD = 330Ω, CS = 150pF
Max
1.89
1.89
V
0.35 V
3.6
25
25
50
85
50
V
V
IN
Max
0.45
+20
+20
+20
V
0.8
0.4
DDIO
DDIO
+0.3
IN
IN
mVp-p
mVp-p
mVp-p
Units
MHz
4.4 °C/W
≥
≥
°C
V
V
V
≥
±25 kV
±10 kV
±8 kV
Units
mA
µA
µA
µA
V
V
V
V
V
V
V