QS8K2TR Rohm Semiconductor, QS8K2TR Datasheet - Page 2

• Manufacturer Part Number: QS8K2TR
• Description: MOSFET 2N-CH 30V 3.5A TSMT8
• Manufacturer: Rohm Semiconductor
• Series: -r

Specifications of QS8K2TR

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 54 mOhm @ 3.5A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Gate Charge (qg) @ Vgs: 4.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 285pF @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: TSMT8
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

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*Pulsed
*Pulsed
<It is the same ratings for Tr1 and Tr2.>
Gate-source leakage
Drain-source breakdown voltage V
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
<It is the same ratings for Tr1 and Tr2.>
Forward Voltage
 Electrical characteristics (Ta = 25C)
Body diode characteristics (Source-Drain) (Ta = 25C)
QS8K2
Parameter
Parameter
Symbol
Symbol
R
V
l Y
t
t
I
(BR)DSS
I
C
DS (on)
C
C
V
GS (th)
Q
Q
d(on)
d(off)
Q
GSS
DSS
t
oss
t
SD
iss
rss
fs
r
f
gs
gd
g
l
*
*
*
*
*
*
*
*
*
*
Min.
Min.
0.5
3.0
30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Typ.
285
4.6
0.7
1.5
38
40
55
90
55
12
29
13
8
-
-
-
-
-
-
2/5
Max.
Max.
10
1.5
1.2
54
56
77
1
-
-
-
-
-
-
-
-
-
-
-
-
Unit
Unit
m
pF
pF
pF
nC
nC
nC
A
A
ns
ns
ns
ns
V
V
S
V
V
I
V
V
I
I
I
I
V
V
f=1MHz
I
V
R
R
I
V
R
I
D
D
D
D
D
D
D
s
GS
DS
DS
DS
GS
GS
GS
=3.5A, V
L
G
G
=1mA, V
=3.5A, V
=3.5A, V
=3.5A, V
=3.5A, V
=1.7A, V
=3.5A, V
=8.8
=10
=10
=30V, V
=10V, I
=10V
=±12V, V
=0V
=4.5V
=4.5V R
Conditions
Conditions
GS
GS
GS
GS
DS
DD
DD
GS
D
GS
=1mA
=0V
=10V
L
=0V
=4.5V
=4V
=2.5V
DS
=4.3
=0V
15V
15V
=0V
2010.09 - Rev.A
Data Sheet