QS8K2TR Rohm Semiconductor, QS8K2TR Datasheet - Page 3
![no-image](/images/manufacturer_photos/0/5/572/rohm_semiconductor_sml.jpg)
QS8K2TR
Manufacturer Part Number
QS8K2TR
Description
MOSFET 2N-CH 30V 3.5A TSMT8
Manufacturer
Rohm Semiconductor
Series
-r
Datasheet
1.QS8K2TR.pdf
(6 pages)
Specifications of QS8K2TR
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
54 mOhm @ 3.5A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3.5A
Vgs(th) (max) @ Id
1.5V @ 1mA
Gate Charge (qg) @ Vgs
4.6nC @ 4.5V
Input Capacitance (ciss) @ Vds
285pF @ 10V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
TSMT8
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
Electrical characteristic curves
QS8K2
1000
1000
100
100
3.5
2.5
1.5
0.5
10
10
3
2
1
0
Fig.4 Static Drain-Source On-State
Fig.7 Static Drain-Source On-State
0.1
0.1
0
Ta= 25°C
Pulsed
V
Pulsed
Fig.1 Typical Output Characteristics( Ⅰ)
DRAIN-SOURCE VOLTAGE : V
GS
DRAIN-CURRENT : I
DRAIN-CURRENT : I
Resistance vs. Drain Current( Ⅰ)
= 2.5V
Resistance vs. Drain Current( Ⅳ)
0.2
0.4
V
V
V
V
V
V
GS
GS
GS
GS
GS
GS
= 10V
= 4.5V
= 4.0V
= 2.5V
= 2.0V
= 1.8V
1
1
0.6
Ta=125°C
Ta=75°C
Ta=25°C
Ta= 25°C
V
D
D
V
V
V
GS
[A]
[A]
GS
GS
GS
= 1.5V
Ta=25°C
Pulsed
= 2.5V
= 4.0V
= 4.5V
0.8
DS
[V]
10
10
1
1000
100
3.5
2.5
1.5
0.5
0.1
10
10
3
2
1
0
1
0.01
0
0.1
Fig.2 Typical Output Characteristics( Ⅱ)
Fig.5 Static Drain-Source On-State
V
Pulsed
DRAIN-SOURCE VOLTAGE : V
V
Pulsed
DS
GS
Fig.8 Forward Transfer Admittance
= 10V
= 4.5V
2
V
V
V
V
V
V
Resistance vs. Drain Current( Ⅱ)
DRAIN-CURRENT : I
GS
GS
GS
GS
GS
GS
DRAIN-CURRENT : I
vs. Drain Current
= 10V
= 4.5V
= 4.0V
= 2.5V
= 2.0V
= 1.8V
0.1
4
3/5
1
6
Ta= 25°C
Ta=25°C
Ta=75°C
Ta=125°C
Ta=125°C
Ta=75°C
Ta=25°C
Ta= 25°C
1
V
Ta=25°C
Pulsed
GS
D
= 1.5V
8
[A]
D
[A]
DS
[V]
10
10
10
0.001
1000
0.01
100
0.01
0.1
10
10
0.1
10
1
1
Fig.6 Static Drain-Source On-State
0.1
0
0
V
Pulsed
V
Pulsed
V
Pulsed
DS
Fig.3 Typical Transfer Characteristics
GS
GS
GATE-SOURCE VOLTAGE : V
DRAIN-CURRENT : I
SOURCE-DRAIN VOLTAGE : V
= 10V
= 4V
Resistance vs. Drain Current( Ⅲ)
=0V
Fig.9 Reverse Drain Current
0.5
1
vs. Sourse-Drain Voltage
1
2010.09 - Rev.A
D
[A]
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= 25°C
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=25°C
2
Ta=125°C
Ta=75°C
Ta=25°C
Ta= 25°C
Data Sheet
GS
SD
[V]
[V]
1.5
10
3