QS8K2TR Rohm Semiconductor, QS8K2TR Datasheet - Page 5

• Manufacturer Part Number: QS8K2TR
• Description: MOSFET 2N-CH 30V 3.5A TSMT8
• Manufacturer: Rohm Semiconductor
• Series: -r

Specifications of QS8K2TR

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 54 mOhm @ 3.5A, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Gate Charge (qg) @ Vgs: 4.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 285pF @ 10V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: TSMT8
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

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 Measurement circuits
QS8K2
Fig.1-1 Switching time measurement circuit
Fig.2-1 Gate charge measurement circuit
I
G(Const.)
R
R
G
G
V
V
GS
GS
D.U.T.
D.U.T.
I
I
D
D
R
V
R
L
V
DD
L
DD
V
V
DS
DS
V
V
GS
DS
V
GS
t
Fig.2-2 Gate Charge Waveform
V
d(on)
Fig.1-2 Switching waveforms
G
Q
gs
10%
t
50%
5/5
on
10%
Pulse width
Q
t
90%
r
gd
Q
g
90%
t
d(off)
Charge
t
off
50%
10%
t
90%
f
2010.09 - Rev.A
Data Sheet