QS8K2TR Rohm Semiconductor, QS8K2TR Datasheet - Page 5
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QS8K2TR
Manufacturer Part Number
QS8K2TR
Description
MOSFET 2N-CH 30V 3.5A TSMT8
Manufacturer
Rohm Semiconductor
Series
-r
Datasheet
1.QS8K2TR.pdf
(6 pages)
Specifications of QS8K2TR
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
54 mOhm @ 3.5A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3.5A
Vgs(th) (max) @ Id
1.5V @ 1mA
Gate Charge (qg) @ Vgs
4.6nC @ 4.5V
Input Capacitance (ciss) @ Vds
285pF @ 10V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
TSMT8
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
Measurement circuits
QS8K2
Fig.1-1 Switching time measurement circuit
Fig.2-1 Gate charge measurement circuit
I
G(Const.)
R
R
G
G
V
V
GS
GS
D.U.T.
D.U.T.
I
I
D
D
R
V
R
L
V
DD
L
DD
V
V
DS
DS
V
V
GS
DS
V
GS
t
Fig.2-2 Gate Charge Waveform
V
d(on)
Fig.1-2 Switching waveforms
G
Q
gs
10%
t
50%
5/5
on
10%
Pulse width
Q
t
90%
r
gd
Q
g
90%
t
d(off)
Charge
t
off
50%
10%
t
90%
f
2010.09 - Rev.A
Data Sheet