STB11N52K3 STMicroelectronics, STB11N52K3 Datasheet

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STB11N52K3

Manufacturer Part Number
STB11N52K3
Description
MOSFET Power N-Ch 525V 0.41 Ohm 10A SuperMESH3 125w
Manufacturer
STMicroelectronics
Datasheet

Specifications of STB11N52K3

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Manufacturer
Quantity
Price
Part Number:
STB11N52K3
Manufacturer:
STMicroelectronics
Quantity:
800
Part Number:
STB11N52K3
Manufacturer:
ST
0
Features
Application
Switching applications
Description
These devices are N-channel Power MOSFETs
made using the SuperMESH3™ technology that
is obtained via improvements applied to
STMicroelectronics’ SuperMESH™ technology
combined with a new optimized vertical structure.
The resulting transistor has an extremely low on
resistance, superior dynamic performance and
high avalanche capability, making it especially
suitable for the most demanding applications.
Table 1.
May 2011
STB11N52K3
STP11N52K3
STF11N52K3
Order codes
100% avalanche tested
Extremely high dv/dt capability
Gate charge minimized
Very low intrinsic capacitance
Improved diode reverse recovery
characteristics
Zener-protected
N-channel 525 V, 0.41 Ω , 10 A SuperMESH3™ Power MOSFET
STB11N52K3
STF11N52K3
STP11N52K3
Order codes
Device summary
525 V
V
DSS
< 0.51 Ω
R
max.
DS(on)
11N52K3
Marking
10 A
I
D
Doc ID 018868 Rev 1
125 W
125 W
30 W
P
w
STB11N52K3, STF11N52K3
Figure 1.
TO-220
Packages
TO-220FP
TO-220
D²PAK
D²PAK,TO-220FP, TO-220
G(1)
1
Internal schematic diagram
2
3
D²PAK
STP11N52K3
D(2)
S(3)
1
3
Tape and reel
Packaging
Tube
Tube
TO-220FP
www.st.com
AM01476v1
1
1/19
2
3
19

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STB11N52K3 Summary of contents

Page 1

... The resulting transistor has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications. Table 1. Device summary Order codes STB11N52K3 STF11N52K3 STP11N52K3 May 2011 STB11N52K3, STF11N52K3 D²PAK,TO-220FP, TO-220 125 TO-220 125 W Figure 1. ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/19 STB11N52K3, STF11N52K3, STP11N52K3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Doc ID 018868 Rev ...

Page 3

... STB11N52K3, STF11N52K3, STP11N52K3 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain- source voltage DS V Gate- source voltage GS I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed Total dissipation at T TOT Avalanche current, repetitive or not repetitive (pulse width limited by T Single pulse avalanche energy ...

Page 4

... D Parameter Test conditions MHz 420 f=1 MHz open drain V = 420 (see Figure 18) DS Parameter Test conditions V = 210 4.7 Ω (see Figure 17) Doc ID 018868 Rev 1 STB11N52K3, STF11N52K3, STP11N52K3 Min. Typ 525 =125 ° µ 0.41 Min. Typ. 1400 - 110 oss Min. ...

Page 5

... STB11N52K3, STF11N52K3, STP11N52K3 Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1 ...

Page 6

... Figure 6. Output characteristics I D (A) V =10V 6/19 STB11N52K3, STF11N52K3, STP11N52K3 Figure 3. AM09112v1 Tj=150°C Tc=25°C Single pulse 10µs 100µs 1ms 10ms V (V) 100 DS Figure 5. AM09113v1 Tj=150°C Tc=25°C Single pulse 10µs 100µs 1ms 10ms 100 ...

Page 7

... STB11N52K3, STF11N52K3, STP11N52K3 Figure 8. Gate charge vs gate-source voltage Figure ( =420V =10A Figure 10. Capacitance variations C (pF) 1000 100 Figure 12. Normalized gate threshold voltage vs temperature V GS(th) (norm) 1.10 1.00 0.90 0.80 0.70 -75 -25 25 AM09116v1 R DS(on) 0.54 400 0.52 350 0.50 300 0.48 250 0 ...

Page 8

... Figure 16. Maximum avalanche energy vs starting Tj E (mJ) AS 180 160 140 120 100 8/19 Figure 15. Normalized B AM09123v1 BV T =25° =150° ( AM09124v1 = 100 120 140 T (°C) J Doc ID 018868 Rev 1 STB11N52K3, STF11N52K3, STP11N52K3 vs temperature VDSS DSS (norm) 1.10 1.05 1.00 0.95 0.90 -75 - AM09122v1 T (°C) 125 J ...

Page 9

... STB11N52K3, STF11N52K3, STP11N52K3 3 Test circuits Figure 17. Switching times test circuit for resistive load D.U. Figure 19. Test circuit for inductive load switching and diode recovery times FAST L=100µH G D.U.T. DIODE Ω Figure 21. Unclamped inductive waveform Figure 18. Gate charge test circuit 3.3 2200 µ ...

Page 10

... Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. 10/19 STB11N52K3, STF11N52K3, STP11N52K3 Doc ID 018868 Rev 1 ® ...

Page 11

... STB11N52K3, STF11N52K3, STP11N52K3 Table 9. TO-220FP mechanical data Dim Dia Figure 23. TO-220FP drawing A Min. 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 28.6 9.8 2.9 15 Dia Doc ID 018868 Rev 1 Package mechanical data mm Typ. Max. 4.6 2.7 2.75 0.7 1 1.70 1.70 5.2 2 ...

Page 12

... Package mechanical data Table 10. TO-220 type A mechanical data Dim L20 L30 ∅ 12/19 STB11N52K3, STF11N52K3, STP11N52K3 mm Min. Typ. 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 Doc ID 018868 Rev 1 Max. 4.60 0.88 1.70 ...

Page 13

... STB11N52K3, STF11N52K3, STP11N52K3 Figure 24. TO-220 type A drawing Doc ID 018868 Rev 1 Package mechanical data 0015988_typeA_Rev_S 13/19 ...

Page 14

... Package mechanical data Table 11. D²PAK (TO-263) mechanical data Dim 14/19 STB11N52K3, STF11N52K3, STP11N52K3 mm Min. Typ. 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 2.54 4.88 15 2.49 2.29 1.27 1.30 0.4 0° Doc ID 018868 Rev 1 Max. 4.60 0.23 0.93 1.70 ...

Page 15

... STB11N52K3, STF11N52K3, STP11N52K3 Figure 25. D²PAK footprint 12.20 Figure 26. D²PAK (TO-263) drawing a. All dimension are in millimeters (a) 16.90 3.50 9.75 Doc ID 018868 Rev 1 Package mechanical data 5.08 1.60 Footprint 0079457_R 15/19 ...

Page 16

... D²PAK (TO-263) tape and reel mechanical data Dim. Min. A0 10.5 B0 15.7 D 1.5 D1 1.59 E 1.65 F 11.4 K0 4.8 P0 3.9 P1 11 0.25 W 23.7 16/19 STB11N52K3, STF11N52K3, STP11N52K3 Tape mm Dim. Max. 10.7 A 15.9 B 1.6 C 1.61 D 1.85 G 11.6 N 5.0 T 4.1 12.1 2.1 0.35 24.3 Doc ID 018868 Rev 1 Reel mm Min. Max. 330 1 ...

Page 17

... STB11N52K3, STF11N52K3, STP11N52K3 Figure 27. Tape for D²PAK (TO-263 Figure 28. Reel for D²PAK (TO-263) REEL DIMENSIONS A 10 pitches cumulative tolerance on tape +/- 0 Top cover tape User direction of feed User direction of feed 40mm min. Access hole location B D Full radius Tape slot in core for tape start 25 mm min ...

Page 18

... Revision history 6 Revision history Table 13. Document revision history Date 20-May-2011 18/19 STB11N52K3, STF11N52K3, STP11N52K3 Revision 1 First release. Doc ID 018868 Rev 1 Changes ...

Page 19

... STB11N52K3, STF11N52K3, STP11N52K3 Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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