STB11N52K3 STMicroelectronics, STB11N52K3 Datasheet - Page 4

• Manufacturer Part Number: STB11N52K3
• Description: MOSFET Power N-Ch 525V 0.41 Ohm 10A SuperMESH3 125w
• Manufacturer: STMicroelectronics

Specifications of STB11N52K3

• Lead Free Status / Rohs Status: Details

Electrical characteristics
2
4/19
Electrical characteristics
(Tcase =25 °C unless otherwise specified)
Table 4.
Table 5.
1. C
Table 6.
C
Symbol
V
Symbol
Symbol
R
V
oss eq.
t
t
(BR)DSS
increases from 0 to 80% V
d(on)
d(off)
C
I
I
C
DS(on)
C
Q
GS(th)
Q
GSS
DSS
Q
R
oss eq.
t
t
oss
r
f
iss
rss
gs
gd
g
g
(1)
is defined as a constant equivalent capacitance giving the same charging time as C
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
Switching times
Parameter
Parameter
Parameter
DS
= 0)
DS
GS
= 0)
Doc ID 018868 Rev 1
V
V
V
f=1 MHz open drain
V
V
(see Figure 18)
I
V
V
V
V
D
DS
GS
DS
DD
GS
DS
DS
GS
DS
GS
= 1 mA, V
= Max rating
= Max rating, T
= 50 V, f = 1 MHz,
= 0
= 0 to 420 V, V
= 10 V
= ± 20 V; V
= V
= 10 V, I
= 420 V, I
V
R
(see Figure 17)
Test conditions
Test conditions
GS
DD
G
= 4.7 Ω, V
, I
= 210 V, I
GS
D
Test conditions
D
D
= 50 µA
STB11N52K3, STF11N52K3, STP11N52K3
= 5 A
= 0
DS
= 10 A,
=0
GS
C
GS
D
=125 °C
= 0
= 5 A,
= 10 V
Min.
Min.
525
3
-
-
-
-
Min.
-
1400
Typ.
Typ.
3.75
0.41
110
22
83
51
32
3
8
Typ.
281
18
42
7
oss
when V
Max.
Max.
0.51
±10
4.5
50
Max Unit
1
-
-
-
-
-
DS
Unit
Unit
nC
nC
nC
µA
µA
µA
pF
pF
pF
pF
ns
ns
ns
ns
V
V
Ω
Ω