STB11N52K3 STMicroelectronics, STB11N52K3 Datasheet - Page 7

• Manufacturer Part Number: STB11N52K3
• Description: MOSFET Power N-Ch 525V 0.41 Ohm 10A SuperMESH3 125w
• Manufacturer: STMicroelectronics

Specifications of STB11N52K3

• Lead Free Status / Rohs Status: Details

STB11N52K3, STF11N52K3, STP11N52K3
Figure 8.
Figure 10. Capacitance variations
Figure 12. Normalized gate threshold voltage
V
1000
GS(th)
1.00
0.80
0.70
(norm)
1.10
V
0.90
100
(V)
(pF)
12
10
10
GS
C
6
4
2
8
0
-75
1
0
0.1
Gate charge vs gate-source voltage Figure 9.
vs temperature
V
DS
-25
20
1
V
DD
I
D
25
=10A
=420V
40
10
75
60
100
125
V
Doc ID 018868 Rev 1
DS
Q
AM09120v1
T
AM09116v1
AM09118v1
g
(V)
J
100
150
400
350
300
250
200
(nC)
50
0
(°C)
Ciss
Coss
Crss
Figure 11. Output capacitance stored energy
Figure 13. Normalized on resistance vs
R
DS(on)
E
oss
R
DS(on)
(norm)
0.48
0.36
0.50
0.44
0.40
0.38
0.54
0.52
0.46
0.42
(µJ)
2.5
2.0
0.0
1.5
1.0
0.5
(Ω)
6
5
0
4
3
2
1
-50
0
0
Static drain-source on resistance
temperature
-25
2
100
0
V
4
GS
200
=10V
I
25
D
=1.2A
Electrical characteristics
6
300
50
8
75
400
10
100
500
12
T
J
(°C)
AM09117v1
AM09119v1
AM09121v1
V
I
D
DS
(A)
(V)
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