ED DDR3 1G PCF8000 Samsung Semiconductor, ED DDR3 1G PCF8000 Datasheet - Page 25

• Manufacturer Part Number: ED DDR3 1G PCF8000
• Manufacturer: Samsung Semiconductor
• Type: DDR3 SDRAMr

Specifications of ED DDR3 1G PCF8000

• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Access Time (max): 20ns
• Maximum Clock Rate: 1.066GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 130mA
• Pin Count: 96
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

K4B1G04(08/16)46E
Note :
1. The tolerance limits are specified after calibration with stable voltage and temperature. For the behavior of the tolerance limits if temperature or voltage
2. The tolerance limits are specified under the condition that V
3. Pull-down and pull-up ODT resistors are recommended to be calibrated at 0.5XV
4. Not a specification requirement, but a design guide line
5. Measurement definition for RTT:
6. Measurement definition for V
9.8.2 ODT Temperature and Voltage sensitivity
If temperature and/or voltage change after calibration, the tolerance limits widen according to table below
∆T = T - T(@calibration); ∆V = V
[ Table 26 ] ODT Sensitivity Definition
[ Table 27 ] ODT Voltage and Temperature Sensitivity
These parameters may not be subject to production test. They are verified by design and characterization.
Apply V
changes after calibration, see following section on voltage and temperature sensitivity
spec shown above, e.g. calibration at 0.2XV
IH
(AC) to pin under test and measure current I(V
dR
dR
RTT
TT
TT
dT
dV
M
and
DDQ
∆
- V
V
M
DDQ
: Measure voltage (V
0.9 - dR
(@calibration); V
DDQ
and 0.8XV
TT
dT * |
RTT
∆ V
Min
Min
IH
M
∆T| - dR
0
0
(AC)), then apply V
=
=
DDQ
DDQ
DD
M
) at test pin (midpoint) with no load
.
TT
Page 25 of 61
= V
= V
dV * |∆V|
DD
DDQ
V
2 x
I(V
V
IH
DDQ
and that V
IH
(AC) - V
V
(AC)) - I(V
M
IL
(AC) to pin under test and measure current I(V
- 1
IL
DDQ
SSQ
(AC)
IL
. Other calibration schemes may be used to achieve the linearity
(AC))
= V
x 100
1.6 + dR
SS
TT
dT * |
Max
0.15
Max
1.5
∆T| + dR
1Gb DDR3 SDRAM
TT
Rev. 1.0 February 2009
dV * |∆V|
IL
(AC)) perspectively
RZQ/2,4,6,8,12
%/mV
Units
Units
%/°C