ED DDR3 1G PCF8000 Samsung Semiconductor, ED DDR3 1G PCF8000 Datasheet - Page 33

• Manufacturer Part Number: ED DDR3 1G PCF8000
• Manufacturer: Samsung Semiconductor
• Type: DDR3 SDRAMr

Specifications of ED DDR3 1G PCF8000

• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Access Time (max): 20ns
• Maximum Clock Rate: 1.066GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 130mA
• Pin Count: 96
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

K4B1G04(08/16)46E
[ Table 32 ] IDD0 Measurement - Loop Pattern
Note :
1. DM must be driven LOW all the time. DQS, DQS are MID-LEVEL.
2. DQ signals are MID-LEVEL.
0
1
2
3
4
5
6
7
1*nRC + nRAS
1*nRC + 1, 2
1*nRC + 3, 4
1*nRC + 0
10*nRC
12*nRC
14*nRC
2*nRC
4*nRC
6*nRC
8*nRC
nRAS
1,2
3,4
...
...
...
...
0
repeat pattern 1...4 until nRAS - 1, truncate if necessary
repeat pattern 1...4 until nRC - 1, truncate if necessary
repeat pattern 1...4 until 1*nRC + nRAS - 1, truncate if necessary
repeat 1...4 until 2*nRC - 1, truncate if necessary
repeat Sub-Loop 0, use BA[2:0] = 1 instead
repeat Sub-Loop 0, use BA[2:0] = 2 instead
repeat Sub-Loop 0, use BA[2:0] = 3 instead
repeat Sub-Loop 0, use BA[2:0] = 4 instead
repeat Sub-Loop 0, use BA[2:0] = 5 instead
repeat Sub-Loop 0, use BA[2:0] = 6 instead
repeat Sub-Loop 0, use BA[2:0] = 7 instead
PRE
PRE
ACT
D, D
D, D
ACT
D, D
D, D
0
1
1
0
0
1
1
0
1
0
0
1
0
0
0
1
0
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1
0
1
1
1
0
1
1
1
0
1
0
1
0
1
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
00
00
00
00
00
00
00
00
0
0
0
0
0
0
0
0
1Gb DDR3 SDRAM
0
0
0
0
0
0
0
0
Rev. 1.0 February 2009
0
0
0
0
F
F
F
F
0
0
0
0
0
0
0
0
-
-
-
-
-
-
-