ED DDR3 1G PCF8000 Samsung Semiconductor, ED DDR3 1G PCF8000 Datasheet - Page 28

• Manufacturer Part Number: ED DDR3 1G PCF8000
• Manufacturer: Samsung Semiconductor
• Type: DDR3 SDRAMr

Specifications of ED DDR3 1G PCF8000

• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Access Time (max): 20ns
• Maximum Clock Rate: 1.066GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 130mA
• Pin Count: 96
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

K4B1G04(08/16)46E
CK
CK
CK
CK
DQ, DM
DQS , DQS
TDQS , TDQS
DQ, DM
DQS , DQS
TDQS , TDQS
Begin point : Rising edge of CK - CK
with ODT being first registered low
Begin point : Rising edge of CK - CK
defined by the end point of ODTLcnw
V
V
RTT_Nom
RTT_Nom
End point
Extrapolated point
at V
V
SW2
RTT_Nom
V
SW1
t
End point Extrapolated point at V
t
End point Extrapolated point at V
AOFPD
ADC
T
T
SW2
SW21
T
SW1
T
SW11
Figure 17. Definition of tAOFPD
V
Figure 18. Definition of tADC
Begin point : Rising edge of CK - CK defined by
the end point of ODTLcwn4 or ODTLcwn8
SW1
Page 28 of 61
V
SW2
V
RTT_Wr
RTT_Nom
RTT_Nom
End point Extrapolated point at V
t
ADC
T
V
SW12
SSQ
V
T
SW22
TT
V
RTT_Nom
1Gb DDR3 SDRAM
Rev. 1.0 February 2009
RTT_Wr
V
SSQ
V
TT