ED DDR3 1G PCF8000 Samsung Semiconductor, ED DDR3 1G PCF8000 Datasheet - Page 39
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ED DDR3 1G PCF8000
Manufacturer Part Number
ED DDR3 1G PCF8000
Description
Manufacturer
Samsung Semiconductor
Type
DDR3 SDRAMr
Datasheet
1.ED_DDR3_1G_PCF8000.pdf
(61 pages)
Specifications of ED DDR3 1G PCF8000
Organization
64Mx16
Density
1Gb
Address Bus
16b
Access Time (max)
20ns
Maximum Clock Rate
1.066GHz
Operating Supply Voltage (typ)
1.5V
Package Type
FBGA
Operating Temp Range
0C to 95C
Operating Supply Voltage (max)
1.575V
Operating Supply Voltage (min)
1.425V
Supply Current
130mA
Pin Count
96
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / Rohs Status
Compliant
K4B1G04(08/16)46E
[ Table 40 ] IDD Specification for 1Gb DDR3 E-die
12.0 Input/Output Capacitance
IDD2P0(slow exit)
IDD2P1(fast exit)
IDD3P(fast exit)
Symbol
IDD2NT
IDD4W
IDD2N
IDD2Q
IDD3N
IDD4R
IDD5B
IDD0
IDD1
IDD6
IDD7
DDR3-800
6-6-6
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
DDR3-1066
7-7-7
130
130
150
200
65
85
10
25
30
35
30
25
45
10
64Mx16 (K4B1G1646E)
Page 39 of 61
DDR3-1333
9-9-9
160
155
160
240
70
90
10
25
35
40
35
27
50
10
1Gb DDR3 SDRAM
DDR3-1600
Rev. 1.0 February 2009
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Notes