ED DDR3 1G PCF8000 Samsung Semiconductor, ED DDR3 1G PCF8000 Datasheet - Page 39

• Manufacturer Part Number: ED DDR3 1G PCF8000
• Manufacturer: Samsung Semiconductor
• Type: DDR3 SDRAMr

Specifications of ED DDR3 1G PCF8000

• Organization: 64Mx16
• Density: 1Gb
• Address Bus: 16b
• Access Time (max): 20ns
• Maximum Clock Rate: 1.066GHz
• Operating Supply Voltage (typ): 1.5V
• Package Type: FBGA
• Operating Temp Range: 0C to 95C
• Operating Supply Voltage (max): 1.575V
• Operating Supply Voltage (min): 1.425V
• Supply Current: 130mA
• Pin Count: 96
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Compliant

K4B1G04(08/16)46E
[ Table 40 ] IDD Specification for 1Gb DDR3 E-die
12.0 Input/Output Capacitance
IDD2P0(slow exit)
IDD2P1(fast exit)
IDD3P(fast exit)
Symbol
IDD2NT
IDD4W
IDD2N
IDD2Q
IDD3N
IDD4R
IDD5B
IDD0
IDD1
IDD6
IDD7
DDR3-800
6-6-6
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
DDR3-1066
7-7-7
130
130
150
200
65
85
10
25
30
35
30
25
45
10
64Mx16 (K4B1G1646E)
Page 39 of 61
DDR3-1333
9-9-9
160
155
160
240
70
90
10
25
35
40
35
27
50
10
1Gb DDR3 SDRAM
DDR3-1600
Rev. 1.0 February 2009
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Notes