SI3200-BS Silicon Laboratories Inc, SI3200-BS Datasheet - Page 4

• Manufacturer Part Number: SI3200-BS
• Description: IC LINEFEED INTRFC 100V 16SOIC
• Manufacturer: Silicon Laboratories Inc
• Series: ProSLIC®r

Specifications of SI3200-BS

• Function: Subscriber Line Interface Concept (SLIC), CODEC
• Interface: GCI, PCM, SPI
• Number Of Circuits: 2
• Voltage - Supply: 3.3V, 5V
• Current - Supply: 110µA
• Power (watts): 941mW
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (3.9mm Width)
• Includes: Battery Switching, BORSCHT Functions, DTMF Generation and Decoding, FSK Tone Generation, Modem and Fax Tone Detection
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Si3220/Si3225
Electrical Specifications
Table 1. Absolute Maximum Ratings and Thermal Information
4
Parameter
Supply Voltage, Si3200 and Si3220/
Si3225
High Battery Supply Voltage, Si3200
Low Battery Supply Voltage, Si3200
TIP or RING Voltage, Si3205
TIP, RING Current, Si3200
STIPAC, STIPDC, SRINGAC,
SRINGDC Current, Si3220/Si3225
Input Current, Digital Input Pins
Digital Input Voltage
Operating Temperature Range
Storage Temperature Range
Si3220/Si3225 Thermal Resistance,
Typical
Si3200 Thermal Resistance, Typical
(SOIC-16 ePad)
Continuous Power Dissipation,
Si3200
Continuous Power Dissipation,
Si3220/25
Notes:
1. Permanent device damage may occur if the above Absolute Maximum Ratings are exceeded. Functional operation
2. The dv/dt of the voltage applied to the VBAT, VBATH, and VBATL pins must be limited to 10 V/µs.
3. Thermal resistance assumes a multi-layer PCB with the exposed pad soldered to a topside PCB pad.
4. On-chip thermal limiting circuitry will shut down the circuit at a junction temperature of approximately 150 °C. For
should be restricted to the conditions as specified in the operational sections of this data sheet. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
optimal reliability, operation above 140 °C junction temperature should be avoided.
3
4
(TQFP-64 ePad)
3
2
V
DD
V
V
I
Symbol
, V
BAT
TIP
TIP
V
T
V
θ
θ
Preliminary Rev. 0.91
DD1
BATH
, I
P
P
I
T
,V
STG
,V
IND
IN
JA
JA
A
D
D
RING
RING
BATL
–V
DD4
T
T
A
A
Test Condition
= 85 °C, TQFP-64
= 85 °C, SOIC-16
Pulse < 10 µs
Pulse < 4 µs
Continuous
Continuous
Continuous
Continuous
10 ms
1
–0.3 to (
0.4 to –104
0.4 to –109
–0.5 to 6.0
V
V
–40 to 100
–40 to 150
BATH
BATH
Value
V
–104
±100
0.85
±20
±10
BATH
V
1.6
25
65
DDD
–15
–35
+ 0.3)
°C/W
°C/W
Unit
mA
mA
mA
°C
°C
W
W
V
V
V
V