UPA1912TE NEC, UPA1912TE Datasheet

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UPA1912TE

Manufacturer Part Number
UPA1912TE
Description
Manufacturer
NEC
Datasheet

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Document No.
Date Published
Printed in Japan
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Remark
DESCRIPTION
directly by a 2.5-V power source.
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Notes 1. PW
The
The PA1912 features a low on-state resistance and excellent
Can be driven by a 2.5-V power source
Low on-state resistance
R
R
R
DS(on)1
DS(on)2
DS(on)3
PART NUMBER
2. Mounted on FR-4 board, t
PA1912 is a switching device which can be driven
PA1912TE
D13806EJ2V0DS00 (2nd edition)
July 1999 NS CP(K)
= 50 m
= 52 m
= 70 m
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
10 s, Duty Cycle
MAX. (V
MAX. (V
MAX. (V
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
Note1
Note2
GS
GS
GS
6-pin Mini Mold (Thin Type)
= –4.5 V, I
= –4.0 V, I
= –2.5 V, I
1 %
PACKAGE
5 sec.
D
D
D
A
= –2.5 A)
= –2.5 A)
= –2.5 A)
The mark
= 25°C)
I
FOR SWITCHING
I
D(pulse)
V
V
D(DC)
T
P
P
T
DSS
GSS
DATA SHEET
stg
T1
T2
ch
–55 to +150
shows major revised points.
±4.5
MOS FIELD EFFECT TRANSISTOR
–12
±10
±18
150
0.2
2
°C
°C
W
W
V
V
A
A
0.32
+0.1
–0.05
PACKAGE DRAWING (Unit : mm)
6
1
0.95
2.9 ±0.2
1.9
5
2
0.95
EQUIVALENT CIRCUIT
Gate
Gate
Protection
Diode
Marking: TD
1, 2, 5, 6 : Drain
3
4
4
3
©
PA1912
: Gate
: Source
Source
Drain
0.9 to 1.1
0.65
Body
Diode
1998, 1999
0.16
0 to 0.1
+0.1
–0.06

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UPA1912TE Summary of contents

Page 1

... Duty Cycle 2. Mounted on FR-4 board, t Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...

Page 3

... Data Sheet D13806EJ2V0DS00 PA1912 Single Pulse 2 Mounted on 250mm copper pad connected to drain electrode in 50mm x 50mm x 1.6mm FR-4 board (pulse) D (DC 100 - Drain to Source Voltage - 25˚C A 25˚C 1.0 2.0 3.0 - Gate to Source Voltage - V ...

Page 4

DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 120 100 80 T =125 0.01 0.1 1 ...

Page 5

... SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 10 1 0.1 0.01 10 0.4 0 Source to Drain Voltage - V F(S-D) 10 Without Board 2 Mounted on 250mm 35 m copper pad connected to drain electrode in 50mm 50mm 1.6mm FR-4 board 1 10 100 PW - Pulse Width - s Data Sheet D13806EJ2V0DS00 PA1912 0.8 1.0 1.2 1000 5 ...

Page 6

Data Sheet D13806EJ2V0DS00 PA1912 ...

Page 7

Data Sheet D13806EJ2V0DS00 PA1912 7 ...

Page 8

... Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance ...

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