BUK9275-100A NXP Semiconductors, BUK9275-100A Datasheet
BUK9275-100A
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BUK9275-100A Summary of contents
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... BUK9275-100A TrenchMOS™ logic level FET Rev. 02 — 4 January 2001 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ Product availability: BUK9275-100A in SOT428 (D-PAK). 2. Features TrenchMOS™ technology Q101 compliant 175 C rated Logic level compatible. 3. Applications Automotive and general purpose power switching: ...
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... Figure 2 and 100 Figure pulsed Figure Figure pulsed unclamped inductive load 100 starting Rev. 02 — 4 January 2001 BUK9275-100A TrenchMOS™ logic level FET Typ Max Unit 100 V 21 175 Min Max Unit 100 V 100 21.7 A 15 +175 C 55 +175 C 21 100 mJ © ...
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... Product specification 03aa16 I der (%) 125 150 175 200 ( der Fig 2. Normalized continuous drain current as a function of mounting base temperature. R DSon = D. Rev. 02 — 4 January 2001 BUK9275-100A TrenchMOS™ logic level FET 120 100 100 125 150 175 4 ------------------ - 100 100 ...
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... Z th(j-mb) (K/ 0 Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. 9397 750 07699 Product specification Conditions Figure Rev. 02 — 4 January 2001 BUK9275-100A TrenchMOS™ logic level FET Value Unit 71.4 K/W 1.7 K (s) © Philips Electronics N.V. 2001. All rights reserved. ...
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... MHz; Figure 1 measured from drain lead from package to centre of die measured from source lead from package to source bond pad Rev. 02 — 4 January 2001 BUK9275-100A TrenchMOS™ logic level FET Typ Max Unit 2 500 A 2 100 188 1268 1690 ...
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... Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values. a 3.2 3.4 3.6 3.8 4 Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Rev. 02 — 4 January 2001 BUK9275-100A TrenchMOS™ logic level FET Min Typ Max 0.85 1.2 63 220 03na74 ...
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... C (pF) 2500 2000 1500 1000 ( MHz GS Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. Rev. 02 — 4 January 2001 BUK9275-100A TrenchMOS™ logic level FET min typ max 0 0.5 1 1 500 (V) © Philips Electronics N.V. 2001. All rights reserved. ...
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... Product specification 03na71 ( Fig 14. Gate-source voltage as a function of turn-on gate charge; typical values ( 175 0.0 0.3 0.6 0.9 1.2 Rev. 02 — 4 January 2001 BUK9275-100A TrenchMOS™ logic level FET 03na73 ( (nC 03na72 1 (V) © Philips Electronics N.V. 2001. All rights reserved ...
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... REFERENCES JEDEC EIAJ TO-252 SC-63 Rev. 02 — 4 January 2001 BUK9275-100A TrenchMOS™ logic level FET max. min. 0.7 10.4 2.95 0.5 0.2 0.5 9.6 2.55 ...
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... DSS ’ changed from ‘17 A’ to ‘14 A’ in the ‘Conditions’ column of ‘W D Section 6 on page 2. Rev. 02 — 4 January 2001 BUK9275-100A TrenchMOS™ logic level FET ’; DSS © Philips Electronics N.V. 2001. All rights reserved ...
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... Rev. 02 — 4 January 2001 BUK9275-100A TrenchMOS™ logic level FET Philips Semiconductors assumes no © ...
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... United States: Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553 Internet: http://www.semiconductors.philips.com (SCA70) Rev. 02 — 4 January 2001 BUK9275-100A TrenchMOS™ logic level FET © Philips Electronics N.V. 2001. All rights reserved ...
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... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 4 January 2001 Document order number: 9397 750 07699 Printed in The Netherlands BUK9275-100A TrenchMOS™ logic level FET ...