BUK9275-100A,118 NXP Semiconductors, BUK9275-100A,118 Datasheet

MOSFET N-CH 100V 21.7A DPAK

BUK9275-100A,118

Manufacturer Part Number
BUK9275-100A,118
Description
MOSFET N-CH 100V 21.7A DPAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of BUK9275-100A,118

Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
72 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
21.7A
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
1690pF @ 25V
Power - Max
88W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.072 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 10 V
Continuous Drain Current
21.7 A
Power Dissipation
88000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934056253118
BUK9275-100A /T3
BUK9275-100A /T3
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
Avalanche ruggedness
E
D
DS
tot
DS(AL)S
DSon
Low conduction losses due to low
on-state resistance
Q101 compliant
12 V, 24 V and 42 V loads
BUK9275-100A
N-channel TrenchMOS logic level FET
Rev. 03 — 15 June 2010
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
non-repetitive
drain-source
avalanche energy
Conditions
T
V
see
T
V
T
V
T
V
T
see
I
R
T
D
j
mb
j
j
j
j(init)
GS
GS
GS
GS
GS
≥ 25 °C; T
= 25 °C
= 25 °C
= 25 °C;
= 14 A; V
Figure
Figure
= 25 °C; see
= 5 V; T
= 4.5 V; I
= 10 V; I
= 5 V; I
= 50 Ω; V
= 25 °C; unclamped
1; see
12; see
D
sup
mb
j
D
≤ 175 °C
= 10 A;
D
GS
= 10 A;
≤ 100 V;
= 25 °C;
= 10 A;
= 5 V;
Figure 2
Figure 3
Figure 13
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
Automotive and general purpose
power switching
Min
-
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
-
62
64
-
Max Unit
100
21.7 A
88
84
72
75
100
V
W
mΩ
mΩ
mΩ
mJ

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BUK9275-100A,118 Summary of contents

Page 1

... BUK9275-100A N-channel TrenchMOS logic level FET Rev. 03 — 15 June 2010 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... ° ≤ 100 Ω sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 June 2010 BUK9275-100A N-channel TrenchMOS logic level FET Graphic symbol mbb076 Version SOT428 Min Typ Max - - 100 - - 100 - ...

Page 3

... T (°C) mb Fig DSon DS D D.C. 10 All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 June 2010 BUK9275-100A N-channel TrenchMOS logic level FET 120 der 100 Normalized total power dissipation as a function of mounting base temperature 03na79 μs 100 μ ...

Page 4

... Transient thermal impedance from junction to ambient as a function of pulse duration BUK9275-100A Product data sheet Conditions see Figure 4 −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 June 2010 BUK9275-100A N-channel TrenchMOS logic level FET Min Typ - - - 71.4 03na80 t p δ ...

Page 5

... ° ° see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 June 2010 BUK9275-100A N-channel TrenchMOS logic level FET Min Typ Max 100 - - 1 500 - 0. ...

Page 6

... V (V) DS Fig 6. 03aa36 max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 June 2010 BUK9275-100A N-channel TrenchMOS logic level FET 75 DSon Drain-source on-state resistance as a function of gate-source; typical values ( ...

Page 7

... V (V) GS Fig 10. Gate-source voltage as a function of turn-on 03aa33 R DSon (mΩ) 120 180 ( ° Fig 12. Drain-source on-state resistance as a function All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 June 2010 BUK9275-100A N-channel TrenchMOS logic level FET gate charge; typical values ...

Page 8

... Fig 14. Input, output and reverse transfer capacitances ( 175 ° 0.3 0.6 0.9 All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 June 2010 BUK9275-100A N-channel TrenchMOS logic level FET C iss C oss C rss 0 −2 − function of drain-source voltage; typical values 03na72 = 25 °C ...

Page 9

... REFERENCES JEDEC JEITA SC-63 TO-252 All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 June 2010 BUK9275-100A N-channel TrenchMOS logic level FET min 10.4 2.95 2.285 4.57 0.5 9 ...

Page 10

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK9275-100A v.3 20100615 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...

Page 11

... All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 June 2010 BUK9275-100A N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...

Page 12

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 03 — 15 June 2010 BUK9275-100A N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 15 June 2010 Document identifier: BUK9275-100A ...

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