BUK9275-100A,118 NXP Semiconductors, BUK9275-100A,118 Datasheet - Page 5

• Manufacturer Part Number: BUK9275-100A,118
• Description: MOSFET N-CH 100V 21.7A DPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9275-100A,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 72 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 21.7A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 1690pF @ 25V
• Power - Max: 88W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.072 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 21.7 A
• Power Dissipation: 88000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056253118; BUK9275-100A /T3; BUK9275-100A /T3

NXP Semiconductors
6. Characteristics
Table 6.
BUK9275-100A
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
C
C
C
t
t
t
t
L
L
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
D
S
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
r
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
source-drain voltage
reverse recovery time
recovered charge
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
V
V
see
V
T
V
R
measured from drain lead from package
to centre of die ; T
measured from source lead from
package to source bond pad ;
T
I
see
I
V
All information provided in this document is subject to legal disclaimers.
D
D
D
D
D
S
S
j
j
DS
DS
DS
DS
GS
GS
GS
GS
GS
DS
GS
G(ext)
= 25 °C; see
= 25 °C
= 10 A; V
= 20 A; dI
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
Figure 11
Figure 11
Figure 11
Figure
Figure
Figure 15
= 100 V; V
= 100 V; V
= 0 V; V
= 0 V; V
= 30 V; R
= 5 V; I
= 4.5 V; I
= 10 V; I
= 5 V; I
= 0 V; V
= -10 V; V
= 10 Ω; T
Rev. 03 — 15 June 2010
12; see
12; see
D
D
GS
S
DS
DS
DS
GS
GS
DS
D
/dt = -100 A/µs;
= 10 A; T
D
= 10 A; T
L
DS
= 10 A; T
= 0 V; T
GS
GS
= V
= V
= V
= 10 A; T
Figure 14
= 1.2 Ω; V
GS
GS
= 10 V; T
= -10 V; T
= 25 V; f = 1 MHz;
j
= 25 °C
= 30 V; T
= 0 V; T
= 0 V; T
j
= 0 V; T
= 0 V; T
GS
GS
GS
= 25 °C
Figure 13
Figure 13
; T
; T
; T
j
j
j
= 25 °C;
= 175 °C;
= 25 °C;
j
j
j
j
j
j
= 25 °C;
= 175 °C;
= -55 °C;
= 25 °C
j
= 25 °C
GS
= 25 °C
j
j
= 25 °C
j
j
j
= 175 °C
= 25 °C
= 25 °C
= -55 °C
= 25 °C
= 5 V;
N-channel TrenchMOS logic level FET
BUK9275-100A
Min
100
89
1
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
1.5
-
-
-
0.05
2
2
-
-
62
64
1268
139
90
13
120
58
57
2.5
7.5
0.85
63
220
© NXP B.V. 2010. All rights reserved.
167
-
Max
-
-
2
-
2.3
500
10
100
100
188
84
72
75
1690
124
-
-
-
-
-
1.2
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nH
nH
V
ns
nC
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