BUK9275-100A,118 NXP Semiconductors, BUK9275-100A,118 Datasheet - Page 3

• Manufacturer Part Number: BUK9275-100A,118
• Description: MOSFET N-CH 100V 21.7A DPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9275-100A,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 72 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 21.7A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 1690pF @ 25V
• Power - Max: 88W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.072 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 21.7 A
• Power Dissipation: 88000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056253118; BUK9275-100A /T3; BUK9275-100A /T3

NXP Semiconductors
[1]
BUK9275-100A
Product data sheet
Fig 1.
Fig 3.
Peak drain current is limited by chip, not package.
I
(%)
der
120
80
40
0
function of mounting base temperature
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
50
(A)
I
10
D
10
10
10
−1
1
3
2
1
100
R
DSon
150
= V
All information provided in this document is subject to legal disclaimers.
T
DS
mb
/ I
03aa24
(°C)
D
200
10
Rev. 03 — 15 June 2010
D.C.
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
10
2
tp = 10 μs
100 μs
1 ms
10 ms
100 ms
N-channel TrenchMOS logic level FET
50
V
DS
(V)
BUK9275-100A
100
03na79
10
3
150
© NXP B.V. 2010. All rights reserved.
T
mb
03aa16
(°C)
200
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