TPC8105-H TOSHIBA Semiconductor CORPORATION, TPC8105-H Datasheet

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TPC8105-H

Manufacturer Part Number
TPC8105-H
Description
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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High Speed and High Efficiency DCíDC Converters
Lithium Ion Battery Applications
Notebook PCs
Portable Equipment Applications
Maximum Ratings
Small footprint due to small and thin package
High speed switching
Small gate charge
Low drainïsource ON resistance
High forward transfer admittance : |Y
Low leakage current : I
Enhancementïmode : V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation
Drain power dissipation
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Channel temperature
Storage temperature range
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
This transistor is an electrostatic sensitive device. Please handle with
caution.
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed UíMOSII)
next page.
Characteristics
(Note 2a) (Note 4)
GS
DC
Pulse (Note 1)
= 20 k )
: Qg = 32 nC (typ.)
(Ta = 25°C)
DSS
th
(Note 2a)
(Note 2b)
(t = 10 s)
(t = 10 s)
(Note 1)
(Note 3)
= ï0.8~ï2.0 V (V
= ï0 µA (max) (V
: R
TPC8105íH
Symbol
V
V
V
DS (ON)
E
E
T
I
I
T
P
P
DSS
DGR
GSS
fs
I
DP
AR
AS
AR
stg
D
ch
D
D
| = 2 S (typ.)
DS
= 20 mº (typ.)
DS
= ï0 V, I
í55 to 150
= ï30 V)
Rating
63.7
0.24
í30
í30
í28
±20
150
2.4
1.0
í7
í7
1
D
= ï mA)
Unit
mJ
mJ
°C
°C
W
W
V
V
V
A
A
Weight: 0.080 g (typ.)
Circuit Configuration
JEDEC
JEITA
TOSHIBA
TPC8105-H
2-6J1B
2002-01-18
Š
Š
Unit: mm

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TPC8105-H Summary of contents

Page 1

... V V í30 DSS V V í30 DGR V ±20 V GSS I í í í 0. 150 ° í55 to 150 °C stg 1 TPC8105-H Unit: mm JEDEC Š JEITA Š TOSHIBA 2-6J1B Weight: 0.080 g (typ.) Circuit Configuration 2002-01-18 ...

Page 2

... Lot number. (year of manufacture: last decimal digit of the year of manufacture, month of manufacture: january to december are denoted by letters respectively) Symbol Max Unit R 52.1 °C/W th (ch-a) R 125 °C/W th (ch-a) (b) Device mounted on a glass-epoxy board (b) 25.4 × 25.4 × 0.8 ( í TPC8105-H FR-4 (Unit: mm) 2002-01-18 ...

Page 3

... § í í í (Ta = 25°C) Test Condition — í DSF TPC8105-H Min Typ. Max Unit — — ±10 µA — — µA í10 — — í30 V — — í15 — V í ...

Page 4

... TPC8105-H 2002-01-18 ...

Page 5

... TPC8105-H 2002-01-18 ...

Page 6

... TPC8105-H 2002-01-18 ...

Page 7

... TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice. 7 TPC8105-H 000707EAA 2002-01-18 ...

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